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Anzalone, R., Bongiorno, C., Severino, A., D’Arrigo, G., Abbondanza, G., Foti, G., La Via, F. (2008) Heteroepitaxial growth of (111) 3C-SiC on (110) Si substrate by second order twins. Applied Physics Letters, 92 (22). 224102pp. doi:10.1063/1.2920164

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Reference TypeJournal (article/letter/editorial)
TitleHeteroepitaxial growth of (111) 3C-SiC on (110) Si substrate by second order twins
JournalApplied Physics Letters
AuthorsAnzalone, R.Author
Bongiorno, C.Author
Severino, A.Author
D’Arrigo, G.Author
Abbondanza, G.Author
Foti, G.Author
La Via, F.Author
Year2008 (June 2)Volume92
Issue22
PublisherAIP Publishing
DOIdoi:10.1063/1.2920164Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8564184Long-form Identifiermindat:1:5:8564184:4
GUID0
Full ReferenceAnzalone, R., Bongiorno, C., Severino, A., D’Arrigo, G., Abbondanza, G., Foti, G., La Via, F. (2008) Heteroepitaxial growth of (111) 3C-SiC on (110) Si substrate by second order twins. Applied Physics Letters, 92 (22). 224102pp. doi:10.1063/1.2920164
Plain TextAnzalone, R., Bongiorno, C., Severino, A., D’Arrigo, G., Abbondanza, G., Foti, G., La Via, F. (2008) Heteroepitaxial growth of (111) 3C-SiC on (110) Si substrate by second order twins. Applied Physics Letters, 92 (22). 224102pp. doi:10.1063/1.2920164
In(2008, June) Applied Physics Letters Vol. 92 (22) AIP Publishing

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Anzalone, R., Severino, A., D’Arrigo, G., Bongiorno, C., Abbondanza, G., Foti, G., Saddow, S., La Via, F. (2009) Heteroepitaxy of 3C-SiC on different on-axis oriented silicon substrates. Journal of Applied Physics, 105 (8). 84910pp. doi:10.1063/1.3095462
Severino, A., D’Arrigo, G., Bongiorno, C., Scalese, S., La Via, F., Foti, G. (2007) Thin crystalline 3C-SiC layer growth through carbonization of differently oriented Si substrates. Journal of Applied Physics, 102 (2). 23518pp. doi:10.1063/1.2756620
Anzalone, R., Camarda, M., Locke, C., Alquier, D., Severino, A., Italia, M., Rodilosso, D., Tringali, C., La Magna, A., Foti, G., Saddow, S. E., La Via, F., D’Arrigo, G. (2010) Low Stress Heteroepitaxial 3C-SiC Films Characterized by Microstructure Fabrication and Finite Elements Analysis. Journal of the Electrochemical Society, 157. doi:10.1149/1.3298872
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Severino, A., Camarda, M., Condorelli, G., Perdicaro, L. M. S., Anzalone, R., Mauceri, M., La Magna, A., La Via, F. (2009) Effect of the miscut direction in (111) 3C-SiC film growth on off-axis (111)Si. Applied Physics Letters, 94 (10). 101907pp. doi:10.1063/1.3085769
Severino, Andrea, Bongiorno, Corrado, Anzalone, Ruggero, Abbondanza, Giuseppe, Mauceri, Marco, Condorelli, Giuseppe, Foti, Gaetano, La Via, Francesco (2008) Void Formation in Differently Oriented Si in the Early Stage of SiC Growth. Materials Science Forum, 600. 215-218 doi:10.4028/www.scientific.net/msf.600-603.215
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Locke, Christopher, Anzalone, Ruggero, Severino, Andrea, Bongiorno, Corrado, Litrico, Grazia, La Via, Francesco, Saddow, Stephen E. (2009) High Quality Single Crystal 3C-SiC(111) Films Grown on Si(111). Materials Science Forum, 615. 145-148 doi:10.4028/www.scientific.net/msf.615-617.145
Severino, A., Camarda, M., Scalese, S., Fiorenza, P., Di Franco, S., Bongiorno, C., La Magna, A., La Via, F. (2009) Preferential oxidation of stacking faults in epitaxial off-axis (111) 3C-SiC films. Applied Physics Letters, 95 (11). 111905pp. doi:10.1063/1.3227886
 
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