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Koveshnikov, S., Goel, N., Majhi, P., Wen, H., Santos, M. B., Oktyabrsky, S., Tokranov, V., Kambhampati, R., Moore, R., Zhu, F., Lee, J., Tsai, W. (2008) In0.53Ga0.47As based metal oxide semiconductor capacitors with atomic layer deposition ZrO2 gate oxide demonstrating low gate leakage current and equivalent oxide thickness less than 1nm. Applied Physics Letters, 92 (22). 222904pp. doi:10.1063/1.2931031

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Reference TypeJournal (article/letter/editorial)
TitleIn0.53Ga0.47As based metal oxide semiconductor capacitors with atomic layer deposition ZrO2 gate oxide demonstrating low gate leakage current and equivalent oxide thickness less than 1nm
JournalApplied Physics Letters
AuthorsKoveshnikov, S.Author
Goel, N.Author
Majhi, P.Author
Wen, H.Author
Santos, M. B.Author
Oktyabrsky, S.Author
Tokranov, V.Author
Kambhampati, R.Author
Moore, R.Author
Zhu, F.Author
Lee, J.Author
Tsai, W.Author
Year2008 (June 2)Volume92
Issue22
PublisherAIP Publishing
DOIdoi:10.1063/1.2931031Search in ResearchGate
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Mindat Ref. ID8564192Long-form Identifiermindat:1:5:8564192:3
GUID0
Full ReferenceKoveshnikov, S., Goel, N., Majhi, P., Wen, H., Santos, M. B., Oktyabrsky, S., Tokranov, V., Kambhampati, R., Moore, R., Zhu, F., Lee, J., Tsai, W. (2008) In0.53Ga0.47As based metal oxide semiconductor capacitors with atomic layer deposition ZrO2 gate oxide demonstrating low gate leakage current and equivalent oxide thickness less than 1nm. Applied Physics Letters, 92 (22). 222904pp. doi:10.1063/1.2931031
Plain TextKoveshnikov, S., Goel, N., Majhi, P., Wen, H., Santos, M. B., Oktyabrsky, S., Tokranov, V., Kambhampati, R., Moore, R., Zhu, F., Lee, J., Tsai, W. (2008) In0.53Ga0.47As based metal oxide semiconductor capacitors with atomic layer deposition ZrO2 gate oxide demonstrating low gate leakage current and equivalent oxide thickness less than 1nm. Applied Physics Letters, 92 (22). 222904pp. doi:10.1063/1.2931031
In(2008, June) Applied Physics Letters Vol. 92 (22) AIP Publishing

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Koveshnikov, S., Adamo, C., Tokranov, V., Yakimov, M., Kambhampati, R., Warusawithana, M., Schlom, D. G., Tsai, W., Oktyabrsky, S. (2008) Thermal stability of electrical and structural properties of GaAs-based metal-oxide-semiconductor capacitors with an amorphous LaAlO3 gate oxide. Applied Physics Letters, 93 (1). 12903pp. doi:10.1063/1.2952830
Koveshnikov, S., Tsai, W., Ok, I., Lee, J. C., Torkanov, V., Yakimov, M., Oktyabrsky, S. (2006) Metal-oxide-semiconductor capacitors on GaAs with high-k gate oxide and amorphous silicon interface passivation layer. Applied Physics Letters, 88 (2). 22106pp. doi:10.1063/1.2164327
Zhu, F., Koveshnikov, S., Ok, I., Kim, H. S., Zhang, M., Lee, T., Thareja, G., Yu, L., Lee, J. C., Tsai, W., Tokranov, V., Yakimov, M., Oktyabrsky, S. (2007) Depletion-mode GaAs metal-oxide-semiconductor field-effect transistor with amorphous silicon interface passivation layer and thin HfO2 gate oxide. Applied Physics Letters, 91 (4). 43507pp. doi:10.1063/1.2762295
Goel, N., Majhi, P., Chui, C. O., Tsai, W., Choi, D., Harris, J. S. (2006) InGaAs metal-oxide-semiconductor capacitors with HfO2 gate dielectric grown by atomic-layer deposition. Applied Physics Letters, 89 (16). 163517pp. doi:10.1063/1.2363959
Kim, Hyoung-Sub, Ok, Injo, Zhang, Manhong, Lee, T., Zhu, F., Yu, L., Lee, Jack C., Koveshnikov, S., Tsai, W., Tokranov, V., Yakimov, M., Oktyabrsky, S. (2006) Depletion-mode GaAs metal-oxide-semiconductor field-effect transistor with HfO2 dielectric and germanium interfacial passivation layer. Applied Physics Letters, 89 (22). 222904pp. doi:10.1063/1.2396914
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Shiu, K. H., Chiang, T. H., Chang, P., Tung, L. T., Hong, M., Kwo, J., Tsai, W. (2008) 1nm equivalent oxide thickness in Ga2O3(Gd2O3)∕In0.2Ga0.8As metal-oxide-semiconductor capacitors. Applied Physics Letters, 92 (17). 172904pp. doi:10.1063/1.2918835
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