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Chan, K. C., Lee, P. F., Dai, J. Y. (2008) Study of tunneling mechanism of Au nanocrystals in HfAlO matrix as floating gate memory. Applied Physics Letters, 92 (22). 223105pp. doi:10.1063/1.2936847

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Reference TypeJournal (article/letter/editorial)
TitleStudy of tunneling mechanism of Au nanocrystals in HfAlO matrix as floating gate memory
JournalApplied Physics Letters
AuthorsChan, K. C.Author
Lee, P. F.Author
Dai, J. Y.Author
Year2008 (June 2)Volume92
Issue22
PublisherAIP Publishing
DOIdoi:10.1063/1.2936847Search in ResearchGate
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Mindat Ref. ID8564196Long-form Identifiermindat:1:5:8564196:9
GUID0
Full ReferenceChan, K. C., Lee, P. F., Dai, J. Y. (2008) Study of tunneling mechanism of Au nanocrystals in HfAlO matrix as floating gate memory. Applied Physics Letters, 92 (22). 223105pp. doi:10.1063/1.2936847
Plain TextChan, K. C., Lee, P. F., Dai, J. Y. (2008) Study of tunneling mechanism of Au nanocrystals in HfAlO matrix as floating gate memory. Applied Physics Letters, 92 (22). 223105pp. doi:10.1063/1.2936847
In(2008, June) Applied Physics Letters Vol. 92 (22) AIP Publishing

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Chan, K. C., Lee, P. F., Dai, J. Y. (2008) Single electron tunneling and Coulomb blockade effect in HfAlO∕Au nanocrystals/HfAlO trilayer nonvolatile memory structure. Applied Physics Letters, 92 (14). 143117pp. doi:10.1063/1.2908961
Chan, K. C., Lee, P. F., Dai, J. Y. (2009) Mesoscopic phenomena in Au nanocrystal floating gate memory structure. Applied Physics Letters, 95 (11). 113109pp. doi:10.1063/1.3229885
Liu, W. L., Lee, P. F., Dai, J. Y., Wang, J., Chan, H. L. W., Choy, C. L., Song, Z. T., Feng, S. L. (2005) Self-organized Ge nanocrystals embedded in HfAlO fabricated by pulsed-laser deposition and application to floating gate memory. Applied Physics Letters, 86 (1). 13110pp. doi:10.1063/1.1846154
Yuan, C. L., Darmawan, P., Setiawan, Y., Lee, P. S., Ma, J. (2006) Formation of SrTiO3 nanocrystals in amorphous Lu2O3 high-k gate dielectric for floating gate memory application. Applied Physics Letters, 89 (4). 43104pp. doi:10.1063/1.2234302
Lu, X. B., Lee, P. F., Dai, J. Y. (2005) Synthesis and memory effect study of Ge nanocrystals embedded in LaAlO3 high-k dielectrics. Applied Physics Letters, 86 (20). 203111pp. doi:10.1063/1.1926414
Lu, X. B., Dai, J. Y. (2006) Memory effects of carbon nanotubes as charge storage nodes for floating gate memory applications. Applied Physics Letters, 88 (11). 113104pp. doi:10.1063/1.2179374
You, S. L., Huang, C. C., Wang, C. J., Ho, H. C., Kwo, J., Lee, W. C., Lee, K. Y., Wu, Y. D., Lee, Y. J., Hong, M. (2008) Inelastic electron tunneling spectroscopy study of metal-oxide-semiconductor diodes based on high-κ gate dielectrics. Applied Physics Letters, 92 (1). 12113pp. doi:10.1063/1.2831717
Bar, R., Aluguri, R., Manna, S., Ghosh, A., Satyam, P. V., Ray, S. K. (2015) Multilayer Ge nanocrystals embedded within Al2O3 matrix for high performance floating gate memory devices. Applied Physics Letters, 107 (9). 93102pp. doi:10.1063/1.4929828
Yuan, C L, Chan, M Y, Lee, P S, Darmawan, P, Setiawan, Y (2007) Al2O3nanocrystals embedded in amorphous Lu2O3high-k gate dielectric for floating gate memory application. Journal of Physics: Conference Series, 61. 1312-1316 doi:10.1088/1742-6596/61/1/259
Lee, P. F., Dai, J. Y., Wong, K. H., Chan, H. L. W., Choy, C. L. (2003) Study of interfacial reaction and its impact on electric properties of Hf–Al–O high-k gate dielectric thin films grown on Si. Applied Physics Letters, 82 (15). 2419-2421 doi:10.1063/1.1566796
Kim, JooHyung, Yang, JungYup, Lee, JunSeok, Hong, JinPyo (2008) Memory characteristics of cobalt-silicide nanocrystals embedded in HfO2 gate oxide for nonvolatile nanocrystal flash devices. Applied Physics Letters, 92 (1). 13512pp. doi:10.1063/1.2831667
 
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