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Nakajima, Anri, Fujiaki, Tomo, Fukuda, Yuusuke (2008) Dependence of charge storage and programming characteristics on dot number of floating dot memory. Applied Physics Letters, 92 (22). 223503pp. doi:10.1063/1.2937136

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Reference TypeJournal (article/letter/editorial)
TitleDependence of charge storage and programming characteristics on dot number of floating dot memory
JournalApplied Physics Letters
AuthorsNakajima, AnriAuthor
Fujiaki, TomoAuthor
Fukuda, YuusukeAuthor
Year2008 (June 2)Volume92
Issue22
PublisherAIP Publishing
DOIdoi:10.1063/1.2937136Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8564211Long-form Identifiermindat:1:5:8564211:7
GUID0
Full ReferenceNakajima, Anri, Fujiaki, Tomo, Fukuda, Yuusuke (2008) Dependence of charge storage and programming characteristics on dot number of floating dot memory. Applied Physics Letters, 92 (22). 223503pp. doi:10.1063/1.2937136
Plain TextNakajima, Anri, Fujiaki, Tomo, Fukuda, Yuusuke (2008) Dependence of charge storage and programming characteristics on dot number of floating dot memory. Applied Physics Letters, 92 (22). 223503pp. doi:10.1063/1.2937136
In(2008, June) Applied Physics Letters Vol. 92 (22) AIP Publishing

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Nakajima, Anri, Fujiaki, Tomo, Ezaki, Tatsuya (2009) Impact of floating dot distribution on memory characteristics of self-aligned dots-on-nanowire memory. Journal of Applied Physics, 105 (11). 114505pp. doi:10.1063/1.3130604
Fujiaki, Tomo, Ohkura, Kensaku, Nakajima, Anri (2008) Silicon Single-Electron Memory Having in-Plane Dot with Double Gates. Japanese Journal of Applied Physics, 47 (6) 4985-4987 doi:10.1143/jjap.47.4985
Usuki, Tatsuya, Futatsugi, Toshiro, Nakajima, Anri (1998) Theoretical Analysis of Write Errors and Number of Stored Electrons for Ten-Nanoscale Si Floating-Dot Memory. Japanese Journal of Applied Physics, 37. doi:10.1143/jjap.37.l709
Nakajima, Anri, Futatsugi, Toshiro, Kosemura, Kinjiro, Fukano, Tetsu, Yokoyama, Naoki (1997) Room temperature operation of Si single-electron memory with self-aligned floating dot gate. Applied Physics Letters, 70 (13). 1742-1744 doi:10.1063/1.118653
Nakajima, Anri, Futatsugi, Toshiro, Kosemura, Kinjiro, Fukano, Tetsu, Yokoyama, Naoki (1997) Si single electron tunneling transistor with nanoscale floating dot stacked on a Coulomb island by self-aligned process. Applied Physics Letters, 71 (3). 353-355 doi:10.1063/1.119535
Saitoh, Masumi, Nagata, Eiji, Hiramoto, Toshiro (2003) Large memory window and long charge-retention time in ultranarrow-channel silicon floating-dot memory. Applied Physics Letters, 82 (11). 1787-1789 doi:10.1063/1.1562343
Nakajima, Anri, Fujii, Daiki (2015) Memory operation mechanism of fullerene-containing polymer memory. Applied Physics Letters, 106 (10). 103302pp. doi:10.1063/1.4914881
Nakajima, Anri, Uchino, Masatoshi (2012) Charge redistribution in a charge storage layer containing C60 molecules and organic polymers for long electron retention. Applied Physics Letters, 101 (21). 213301pp. doi:10.1063/1.4767132
Shima, Masashi, Sakuma, Yoshiki, Sugiyama, Yoshihiro, Awano, Yuji, Yokoyama, Naoki (2001) Optical control of charge number in single floating quantum-dot gate in field-effect transistor structure. Applied Physics Letters, 78 (13). 1930-1932 doi:10.1063/1.1359139
Nakajima, Anri, Shoji, Atsushi, Nagano, Kohei, Kajihara, Jun (2015) Dependence of memory characteristics of fullerene-containing polymer on the kind of gate metal. Japanese Journal of Applied Physics, 54 (10) 100303 doi:10.7567/jjap.54.100303
Zaitsu, Koichiro, Kitamura, Yosuke, Ono, Keiji, Tarucha, Seigo (2008) Vertical quantum dot with a vertically coupled charge detector. Applied Physics Letters, 92 (3). 33101pp. doi:10.1063/1.2830979
 
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