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Shahrjerdi, D., Garcia-Gutierrez, D. I., Tutuc, E., Banerjee, S. K. (2008) Chemical and physical interface studies of the atomic-layer-deposited Al2O3 on GaAs substrates. Applied Physics Letters, 92 (22). 223501pp. doi:10.1063/1.2937404

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Reference TypeJournal (article/letter/editorial)
TitleChemical and physical interface studies of the atomic-layer-deposited Al2O3 on GaAs substrates
JournalApplied Physics Letters
AuthorsShahrjerdi, D.Author
Garcia-Gutierrez, D. I.Author
Tutuc, E.Author
Banerjee, S. K.Author
Year2008 (June 2)Volume92
Issue22
PublisherAIP Publishing
DOIdoi:10.1063/1.2937404Search in ResearchGate
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Mindat Ref. ID8564226Long-form Identifiermindat:1:5:8564226:9
GUID0
Full ReferenceShahrjerdi, D., Garcia-Gutierrez, D. I., Tutuc, E., Banerjee, S. K. (2008) Chemical and physical interface studies of the atomic-layer-deposited Al2O3 on GaAs substrates. Applied Physics Letters, 92 (22). 223501pp. doi:10.1063/1.2937404
Plain TextShahrjerdi, D., Garcia-Gutierrez, D. I., Tutuc, E., Banerjee, S. K. (2008) Chemical and physical interface studies of the atomic-layer-deposited Al2O3 on GaAs substrates. Applied Physics Letters, 92 (22). 223501pp. doi:10.1063/1.2937404
In(2008, June) Applied Physics Letters Vol. 92 (22) AIP Publishing

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Garcia-Gutierrez, DI, Kaushik, V, Shahrjerdi, D, Banerjee, S (2008) Physical and electrical characterization of the interface between atomic-layer-deposited Al2O3 on GaAs substrates for CMOS applications. Microscopy and Microanalysis, 14. 446-447 doi:10.1017/s1431927608083001
Shahrjerdi, D., Akyol, T., Ramon, M., Garcia-Gutierrez, D. I., Tutuc, E., Banerjee, S. K. (2008) Self-aligned inversion-type enhancement-mode GaAs metal-oxide-semiconductor field-effect transistor with Al2O3 gate dielectric. Applied Physics Letters, 92 (20). 203505pp. doi:10.1063/1.2931708
Shahrjerdi, D., Garcia-Gutierrez, D. I., Akyol, T., Bank, S. R., Tutuc, E., Lee, J. C., Banerjee, S. K. (2007) GaAs metal-oxide-semiconductor capacitors using atomic layer deposition of HfO2 gate dielectric: Fabrication and characterization. Applied Physics Letters, 91 (19). 193503pp. doi:10.1063/1.2806190
Shahrjerdi, D., Nah, J., Hekmatshoar, B., Akyol, T., Ramon, M., Tutuc, E., Banerjee, S. K. (2010) Hall mobility measurements in enhancement-mode GaAs field-effect transistors with Al2O3 gate dielectric. Applied Physics Letters, 97 (21). 213506pp. doi:10.1063/1.3521284
Shahrjerdi, Davood, Tutuc, Emanuel, Banerjee, Sanjay K. (2007) Impact of surface chemical treatment on capacitance-voltage characteristics of GaAs metal-oxide-semiconductor capacitors with Al2O3 gate dielectric. Applied Physics Letters, 91 (6). 63501pp. doi:10.1063/1.2764438
Ramón, Michael E., Akyol, Tarik, Shahrjerdi, Davood, Young, Chadwin D., Cheng, Julian, Register, Leonard F., Banerjee, Sanjay K. (2013) Fast and slow transient charging in various III-V field-effect transistors with atomic-layer-deposited-Al2O3 gate dielectric. Applied Physics Letters, 102 (2). 22104pp. doi:10.1063/1.4776678
Lin, H. C., Ye, P. D., Wilk, G. D. (2005) Leakage current and breakdown electric-field studies on ultrathin atomic-layer-deposited Al2O3 on GaAs. Applied Physics Letters, 87 (18). 182904pp. doi:10.1063/1.2120904
Hackley, Justin C., Demaree, J. Derek, Gougousi, Theodosia (2008) Interface of atomic layer deposited HfO2 films on GaAs (100) surfaces. Applied Physics Letters, 92 (16). 162902pp. doi:10.1063/1.2908223
Nah, Junghyo, Liu, E.-S., Shahrjerdi, D., Varahramyan, K. M., Banerjee, S. K., Tutuc, E. (2009) Realization of dual-gated Ge–SixGe1−x core-shell nanowire field effect transistors with highly doped source and drain. Applied Physics Letters, 94 (6). 63117pp. doi:10.1063/1.3079410
Zhao, Han, Shahrjerdi, Davood, Zhu, Feng, Zhang, Manhong, Kim, Hyoung-Sub, OK, Injo, Yum, Jung Hwan, Park, Sung Il, Banerjee, Sanjay K., Lee, Jack C. (2008) Gate-first inversion-type InP metal-oxide-semiconductor field-effect transistors with atomic-layer-deposited Al2O3 gate dielectric. Applied Physics Letters, 92 (23). 233508pp. doi:10.1063/1.2937117
Liu, Z. H., Ng, G. I., Arulkumaran, S., Maung, Y. K. T., Teo, K. L., Foo, S. C., Sahmuganathan, V. (2009) Improved two-dimensional electron gas transport characteristics in AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor with atomic layer-deposited Al2O3 as gate insulator. Applied Physics Letters, 95 (22). 223501pp. doi:10.1063/1.3268474
 
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