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Fortunato, Elvira M. C., Pereira, Luís M. N., Barquinha, Pedro M. C., Botelho do Rego, Ana M., Gonçalves, Gonçalo, Vilà, Anna, Morante, Juan R., Martins, Rodrigo F. P. (2008) High mobility indium free amorphous oxide thin film transistors. Applied Physics Letters, 92 (22). 222103pp. doi:10.1063/1.2937473

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Reference TypeJournal (article/letter/editorial)
TitleHigh mobility indium free amorphous oxide thin film transistors
JournalApplied Physics Letters
AuthorsFortunato, Elvira M. C.Author
Pereira, Luís M. N.Author
Barquinha, Pedro M. C.Author
Botelho do Rego, Ana M.Author
Gonçalves, GonçaloAuthor
Vilà, AnnaAuthor
Morante, Juan R.Author
Martins, Rodrigo F. P.Author
Year2008 (June 2)Volume92
Issue22
PublisherAIP Publishing
DOIdoi:10.1063/1.2937473Search in ResearchGate
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Mindat Ref. ID8564232Long-form Identifiermindat:1:5:8564232:0
GUID0
Full ReferenceFortunato, Elvira M. C., Pereira, Luís M. N., Barquinha, Pedro M. C., Botelho do Rego, Ana M., Gonçalves, Gonçalo, Vilà, Anna, Morante, Juan R., Martins, Rodrigo F. P. (2008) High mobility indium free amorphous oxide thin film transistors. Applied Physics Letters, 92 (22). 222103pp. doi:10.1063/1.2937473
Plain TextFortunato, Elvira M. C., Pereira, Luís M. N., Barquinha, Pedro M. C., Botelho do Rego, Ana M., Gonçalves, Gonçalo, Vilà, Anna, Morante, Juan R., Martins, Rodrigo F. P. (2008) High mobility indium free amorphous oxide thin film transistors. Applied Physics Letters, 92 (22). 222103pp. doi:10.1063/1.2937473
In(2008, June) Applied Physics Letters Vol. 92 (22) AIP Publishing

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Fortunato, Elvira, Barquinha, Pedro, Gonçalves, Gonçalo, Pereira, Luís, Martins, Rodrigo (2008) New Amorphous Oxide Semiconductor for Thin Film Transistors (TFTs). Materials Science Forum, 587. 348-352 doi:10.4028/www.scientific.net/msf.587-588.348
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Bernardo, Gabriel, Gonçalves, Gonçalo, Barquinha, Pedro, Ferreira, Quirina, Brotas, Graça, Pereira, Luís, Charas, Ana, Morgado, Jorge, Martins, Rodrigo, Fortunato, Elvira (2009) Polymer light-emitting diodes with amorphous indium-zinc oxide anodes deposited at room temperature. Synthetic Metals, 159 (11). 1112-1115 doi:10.1016/j.synthmet.2009.01.037
Lopes, M. E., Gomes, H. L., Medeiros, M. C. R., Barquinha, P., Pereira, L., Fortunato, E., Martins, R., Ferreira, I. (2009) Gate-bias stress in amorphous oxide semiconductors thin-film transistors. Applied Physics Letters, 95 (6). 63502pp. doi:10.1063/1.3187532
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Nayak, Pradipta K., Busani, Tito, Elamurugu, Elangovan, Barquinha, Pedro, Martins, Rodrigo, Hong, Yongtaek, Fortunato, Elvira (2010) Zinc concentration dependence study of solution processed amorphous indium gallium zinc oxide thin film transistors using high-k dielectric. Applied Physics Letters, 97 (18). 183504pp. doi:10.1063/1.3514249
 
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