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Lu, H. L., Scarel, G., Alia, M., Fanciulli, M., Ding, Shi-Jin, Zhang, David Wei (2008) Spectroscopic ellipsometry study of thin NiO films grown on Si (100) by atomic layer deposition. Applied Physics Letters, 92 (22). 222907pp. doi:10.1063/1.2938697

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Reference TypeJournal (article/letter/editorial)
TitleSpectroscopic ellipsometry study of thin NiO films grown on Si (100) by atomic layer deposition
JournalApplied Physics Letters
AuthorsLu, H. L.Author
Scarel, G.Author
Alia, M.Author
Fanciulli, M.Author
Ding, Shi-JinAuthor
Zhang, David WeiAuthor
Year2008 (June 2)Volume92
Issue22
PublisherAIP Publishing
DOIdoi:10.1063/1.2938697Search in ResearchGate
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Mindat Ref. ID8564288Long-form Identifiermindat:1:5:8564288:9
GUID0
Full ReferenceLu, H. L., Scarel, G., Alia, M., Fanciulli, M., Ding, Shi-Jin, Zhang, David Wei (2008) Spectroscopic ellipsometry study of thin NiO films grown on Si (100) by atomic layer deposition. Applied Physics Letters, 92 (22). 222907pp. doi:10.1063/1.2938697
Plain TextLu, H. L., Scarel, G., Alia, M., Fanciulli, M., Ding, Shi-Jin, Zhang, David Wei (2008) Spectroscopic ellipsometry study of thin NiO films grown on Si (100) by atomic layer deposition. Applied Physics Letters, 92 (22). 222907pp. doi:10.1063/1.2938697
In(2008, June) Applied Physics Letters Vol. 92 (22) AIP Publishing

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