Gaubas, E., Uleckas, A., Grigonis, R., Sirutkaitis, V., Vanhellemont, J. (2008) Microwave probed photoconductivity spectroscopy of deep levels in Ni doped Ge. Applied Physics Letters, 92 (22). 222102pp. doi:10.1063/1.2939096

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Reference Type	Journal (article/letter/editorial)
Title	Microwave probed photoconductivity spectroscopy of deep levels in Ni doped Ge
Journal	Applied Physics Letters
Authors	Gaubas, E.		Author
	Uleckas, A.		Author
	Grigonis, R.		Author
	Sirutkaitis, V.		Author
	Vanhellemont, J.		Author
Year	2008 (June 2)	Volume	92
Issue	22
Publisher	AIP Publishing
DOI	doi:10.1063/1.2939096Search in ResearchGate
	Generate Citation Formats
Mindat Ref. ID	8564334	Long-form Identifier	mindat:1:5:8564334:7
GUID	0
Full Reference	Gaubas, E., Uleckas, A., Grigonis, R., Sirutkaitis, V., Vanhellemont, J. (2008) Microwave probed photoconductivity spectroscopy of deep levels in Ni doped Ge. Applied Physics Letters, 92 (22). 222102pp. doi:10.1063/1.2939096
Plain Text	Gaubas, E., Uleckas, A., Grigonis, R., Sirutkaitis, V., Vanhellemont, J. (2008) Microwave probed photoconductivity spectroscopy of deep levels in Ni doped Ge. Applied Physics Letters, 92 (22). 222102pp. doi:10.1063/1.2939096
In	(2008, June) Applied Physics Letters Vol. 92 (22) AIP Publishing

	Gaubas, E., Uleckas, A., Vaitkus, J. (2009) Spectroscopy of neutron irradiation induced deep levels in silicon by microwave probed photoconductivity transients. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 607 (1). 92-94 doi:10.1016/j.nima.2009.03.136
	Gaubas, E., Uleckas, A., Rafi, J.M., Chen, J., Yang, D., Vanhellemont, J. (2012) Study of irradiation induced changes of electrical and functional characteristics in Ge doped Si diodes. Physica B: Condensed Matter, 407 (15). 2998-3001 doi:10.1016/j.physb.2011.08.056
	*Gaubas, E., Vanhellemont, J. (2006) Dependence of carrier lifetime in germanium on resisitivity and carrier injection level. Applied Physics Letters, 89 (14). 142106pp. doi:10.1063/1.2358967*
	Kurtz, A., Hierro, A., Muñoz, E., Mohanta, S. K., Nakamura, A., Temmyo, J. (2014) Acceptor levels in ZnMgO:N probed by deep level optical spectroscopy. Applied Physics Letters, 104 (8). 81105pp. doi:10.1063/1.4866662
	Castel, V., Brosseau, C. (2008) Magnetic field dependence of the effective permittivity in BaTiO3∕Ni nanocomposites observed via microwave spectroscopy. Applied Physics Letters, 92 (23). 233110pp. doi:10.1063/1.2943153
	Gaubas, E., Kazlauskas, K., Tomašiūnas, R., Vaitkus, J., Žukauskas, A. (2004) Radiation-defect-dependent photoconductivity transients and photoluminescence in semi-insulating GaN. Applied Physics Letters, 84 (25). 5258-5260 doi:10.1063/1.1764939
	*Gaubas, E., Vanhellemont, J. (1996) A simple technique for the separation of bulk and surface recombination parameters in silicon. Journal of Applied Physics, 80 (11). 6293-6297 doi:10.1063/1.363705*
	Kalendra, V., Gaubas, E., Kazukauskas, V., Zasinas, E., Vaitkus, J. (2010) Photoconductivity spectra and deep levels in the irradiated p+–n–n+ Si detectors. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 612 (3). 555-558 doi:10.1016/j.nima.2009.08.043
	Kaniava, A., Rotondaro, A. L. P., Vanhellemont, J., Menczigar, U., Gaubas, E. (1995) Recombination activity of iron‐related complexes in silicon studied by temperature dependent carrier lifetime measurements. Applied Physics Letters, 67 (26). 3930-3932 doi:10.1063/1.114408
	Gaubas, E., Ceponis, T., Jasiunas, A., Uleckas, A., Vaitkus, J., Cortina, E., Militaru, O. (2012) Correlated evolution of barrier capacitance charging, generation, and drift currents and of carrier lifetime in Si structures during 25 MeV neutrons irradiation. Applied Physics Letters, 101 (23). 232104pp. doi:10.1063/1.4769370
	Bagheri, Pegah, Kirste, Ronny, Reddy, Pramod, Washiyama, Shun, Mita, Seiji, Sarkar, Biplab, Collazo, Ramón, Sitar, Zlatko (2020) The nature of the DX state in Ge-doped AlGaN. Applied Physics Letters, 116 (22) 222102pp. doi:10.1063/5.0008362

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Gaubas, E., Uleckas, A., Grigonis, R., Sirutkaitis, V., Vanhellemont, J. (2008) Microwave probed photoconductivity spectroscopy of deep levels in Ni doped Ge. Applied Physics Letters, 92 (22). 222102pp. doi:10.1063/1.2939096

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