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Laboutin, O. A., Welser, R. E. (2008) Impact of GaN buffer layer on the growth and properties of InN islands. Applied Physics Letters, 92 (22). 223103pp. doi:10.1063/1.2939216

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Reference TypeJournal (article/letter/editorial)
TitleImpact of GaN buffer layer on the growth and properties of InN islands
JournalApplied Physics Letters
AuthorsLaboutin, O. A.Author
Welser, R. E.Author
Year2008 (June 2)Volume92
Issue22
PublisherAIP Publishing
DOIdoi:10.1063/1.2939216Search in ResearchGate
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Mindat Ref. ID8564346Long-form Identifiermindat:1:5:8564346:2
GUID0
Full ReferenceLaboutin, O. A., Welser, R. E. (2008) Impact of GaN buffer layer on the growth and properties of InN islands. Applied Physics Letters, 92 (22). 223103pp. doi:10.1063/1.2939216
Plain TextLaboutin, O. A., Welser, R. E. (2008) Impact of GaN buffer layer on the growth and properties of InN islands. Applied Physics Letters, 92 (22). 223103pp. doi:10.1063/1.2939216
In(2008, June) Applied Physics Letters Vol. 92 (22) AIP Publishing

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Laboutin, Oleg, Johnson, Wayne, Welser, Roger (2010) Differences in nucleation and properties of InN islands formed using two different deposition procedures. Journal of Crystal Growth, 312 (21). 3096-3100 doi:10.1016/j.jcrysgro.2010.07.056
Songmuang, R., Landré, O., Daudin, B. (2007) From nucleation to growth of catalyst-free GaN nanowires on thin AlN buffer layer. Applied Physics Letters, 91 (25). 251902pp. doi:10.1063/1.2817941
Pezzagna, S., VĂ©zian, S., Brault, J., Massies, J. (2008) Layer-by-layer epitaxial growth of Mg on GaN(0001). Applied Physics Letters, 92 (23). 233111pp. doi:10.1063/1.2943323
Laboutin, O.A., Welser, R.E. (2009) Photoluminescence emissions both in the visible and infrared spectra from thin, uncapped InN deposits. Journal of Crystal Growth, 311 (2). 254-257 doi:10.1016/j.jcrysgro.2008.11.052
Soh, C. B., Hartono, H., Chow, S. Y., Chua, S. J., Fitzgerald, E. A. (2007) Dislocation annihilation in regrown GaN on nanoporous GaN template with optimization of buffer layer growth. Applied Physics Letters, 90 (5). 53112pp. doi:10.1063/1.2437056
Hamdani, F., Botchkarev, A. E., Tang, H., Kim, W., Morkoç, H. (1997) Effect of buffer layer and substrate surface polarity on the growth by molecular beam epitaxy of GaN on ZnO. Applied Physics Letters, 71 (21). 3111-3113 doi:10.1063/1.120262
Lozano, J. G., Morales, F. M., García, R., González, D., Lebedev, V., Wang, Ch. Y., Cimalla, V., Ambacher, O. (2007) Cubic InN growth on sapphire (0001) using cubic indium oxide as buffer layer. Applied Physics Letters, 90 (9). 91901pp. doi:10.1063/1.2696282
Detchprohm, T., Hiramatsu, K., Amano, H., Akasaki, I. (1992) Hydride vapor phase epitaxial growth of a high quality GaN film using a ZnO buffer layer. Applied Physics Letters, 61 (22). 2688-2690 doi:10.1063/1.108110
Sun, Zeming, Gupta, Mool C. (2018) A study of laser-induced surface defects in silicon and impact on electrical properties. Journal of Applied Physics, 124 (22). 223103pp. doi:10.1063/1.5058143
Lu, C. J., Bendersky, L. A., Lu, Hai, Schaff, William J. (2003) Threading dislocations in epitaxial InN thin films grown on (0001) sapphire with a GaN buffer layer. Applied Physics Letters, 83 (14). 2817-2819 doi:10.1063/1.1616659
Paredis, K., Vanormelingen, K., Vantomme, A. (2008) The influence of a Cu buffer layer on the self-assembly of iron silicide nanostructures on Si(111). Applied Physics Letters, 92 (4). 43111pp. doi:10.1063/1.2838737
 
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