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Rao, Feng, Song, Zhitang, Gong, Yuefeng, Wu, Liangcai, Liu, Bo, Feng, Songlin, Chen, Bomy (2008) Phase change memory cell using tungsten trioxide bottom heating layer. Applied Physics Letters, 92 (22). 223507pp. doi:10.1063/1.2939218

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Reference TypeJournal (article/letter/editorial)
TitlePhase change memory cell using tungsten trioxide bottom heating layer
JournalApplied Physics Letters
AuthorsRao, FengAuthor
Song, ZhitangAuthor
Gong, YuefengAuthor
Wu, LiangcaiAuthor
Liu, BoAuthor
Feng, SonglinAuthor
Chen, BomyAuthor
Year2008 (June 2)Volume92
Issue22
PublisherAIP Publishing
DOIdoi:10.1063/1.2939218Search in ResearchGate
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Mindat Ref. ID8564350Long-form Identifiermindat:1:5:8564350:5
GUID0
Full ReferenceRao, Feng, Song, Zhitang, Gong, Yuefeng, Wu, Liangcai, Liu, Bo, Feng, Songlin, Chen, Bomy (2008) Phase change memory cell using tungsten trioxide bottom heating layer. Applied Physics Letters, 92 (22). 223507pp. doi:10.1063/1.2939218
Plain TextRao, Feng, Song, Zhitang, Gong, Yuefeng, Wu, Liangcai, Liu, Bo, Feng, Songlin, Chen, Bomy (2008) Phase change memory cell using tungsten trioxide bottom heating layer. Applied Physics Letters, 92 (22). 223507pp. doi:10.1063/1.2939218
In(2008, June) Applied Physics Letters Vol. 92 (22) AIP Publishing

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Ren, Kun, Rao, Feng, Song, Zhitang, Wu, Liangcai, Zhou, Xilin, Liu, Bo, Feng, Songlin, Xi, Wei, Chen, Bomy (2010) Phase Change Memory Cell Using Si2Sb2Te3Material. Japanese Journal of Applied Physics, 49 (8) 80212 doi:10.1143/jjap.49.080212
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Rao, Feng, Song, Zhitang, Zhong, Min, Wu, Liangcai, Feng, Gaoming, Liu, Bo, Feng, Songlin, Chen, Bomy (2007) Multilevel Data Storage Characteristics of Phase Change Memory Cell with Doublelayer Chalcogenide Films (Ge2Sb2Te5and Sb2Te3) Japanese Journal of Applied Physics, 46. doi:10.1143/jjap.46.l25
Zhang, Ting, Song, Zhitang, Wang, Feng, Liu, Bo, Feng, Songlin, Chen, Bomy (2007) Advantages of SiSb phase-change material and its applications in phase-change memory. Applied Physics Letters, 91 (22). 222102pp. doi:10.1063/1.2805633
Lu, Yegang, Song, Sannian, Gong, Yuefeng, Song, Zhitang, Rao, Feng, Wu, Liangcai, Liu, Bo, Yao, Dongning (2011) Ga-Sb-Se material for low-power phase change memory. Applied Physics Letters, 99 (24). 243111pp. doi:10.1063/1.3669699
Lu, Yegang, Song, Sannian, Song, Zhitang, Wu, Liangcai, He, Aodong, Gong, Yuefeng, Rao, Feng, Liu, Bo (2012) Superlattice-like electrode for low-power phase-change random access memory. Applied Physics Letters, 101 (11). 113104pp. doi:10.1063/1.4751258
Zhang, Ting, Song, Zhitang, Gong, Yuefeng, Lin, Yun, Xu, Cheng, Chen, Yifeng, Liu, Bo, Feng, Songlin (2008) Phase change memory based on Ge2Sb2Te5 capped between polygermanium layers. Applied Physics Letters, 92 (11). 113503pp. doi:10.1063/1.2898216
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