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Rüdiger, Marc, Trupke, Thorsten, Würfel, Peter, Roth, Thomas, Glunz, Stefan W. (2008) Influence of photon reabsorption on temperature dependent quasi-steady-state photoluminescence lifetime measurements on crystalline silicon. Applied Physics Letters, 92 (22). 222112pp. doi:10.1063/1.2939586

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Reference TypeJournal (article/letter/editorial)
TitleInfluence of photon reabsorption on temperature dependent quasi-steady-state photoluminescence lifetime measurements on crystalline silicon
JournalApplied Physics Letters
AuthorsRüdiger, MarcAuthor
Trupke, ThorstenAuthor
Würfel, PeterAuthor
Roth, ThomasAuthor
Glunz, Stefan W.Author
Year2008 (June 2)Volume92
Issue22
PublisherAIP Publishing
DOIdoi:10.1063/1.2939586Search in ResearchGate
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Mindat Ref. ID8564380Long-form Identifiermindat:1:5:8564380:6
GUID0
Full ReferenceRüdiger, Marc, Trupke, Thorsten, Würfel, Peter, Roth, Thomas, Glunz, Stefan W. (2008) Influence of photon reabsorption on temperature dependent quasi-steady-state photoluminescence lifetime measurements on crystalline silicon. Applied Physics Letters, 92 (22). 222112pp. doi:10.1063/1.2939586
Plain TextRüdiger, Marc, Trupke, Thorsten, Würfel, Peter, Roth, Thomas, Glunz, Stefan W. (2008) Influence of photon reabsorption on temperature dependent quasi-steady-state photoluminescence lifetime measurements on crystalline silicon. Applied Physics Letters, 92 (22). 222112pp. doi:10.1063/1.2939586
In(2008, June) Applied Physics Letters Vol. 92 (22) AIP Publishing

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Trupke, T. (2006) Influence of photon reabsorption on quasi-steady-state photoluminescence measurements on crystalline silicon. Journal of Applied Physics, 100 (6). 63531pp. doi:10.1063/1.2187415
Roth, Thomas, Rüdiger, Marc, Warta, Wilhelm, Glunz, Stefan W. (2008) Electronic properties of titanium in boron-doped silicon analyzed by temperature-dependent photoluminescence and injection-dependent photoconductance lifetime spectroscopy. Journal of Applied Physics, 104 (7). 74510pp. doi:10.1063/1.2996252
Bardos, R. A., Trupke, T., Schubert, M. C., Roth, T. (2006) Trapping artifacts in quasi-steady-state photoluminescence and photoconductance lifetime measurements on silicon wafers. Applied Physics Letters, 88 (5). 53504pp. doi:10.1063/1.2165274
Rosenits, Philipp, Roth, Thomas, Warta, Wilhelm, Reber, Stefan, Glunz, Stefan W. (2009) Determining the excess carrier lifetime in crystalline silicon thin-films by photoluminescence measurements. Journal of Applied Physics, 105 (5). 53714pp. doi:10.1063/1.3080174
Würfel, P., Trupke, T., Puzzer, T., Schäffer, E., Warta, W., Glunz, S. W. (2007) Diffusion lengths of silicon solar cells from luminescence images. Journal of Applied Physics, 101 (12). 123110pp. doi:10.1063/1.2749201
Giesecke, J. A., Schubert, M. C., Walter, D., Warta, W. (2010) Minority carrier lifetime in silicon wafers from quasi-steady-state photoluminescence. Applied Physics Letters, 97 (9). 92109pp. doi:10.1063/1.3485216
Diez, S., Rein, S., Roth, T., Glunz, S. W. (2007) Cobalt related defect levels in silicon analyzed by temperature- and injection-dependent lifetime spectroscopy. Journal of Applied Physics, 101 (3). 33710pp. doi:10.1063/1.2433743
Rosenits, Philipp, Roth, Thomas, Glunz, Stefan W. (2011) Erratum on “Determining the defect parameters of the deep aluminum-related defect center in silicon” [Appl. Phys. Lett. 91, 122109 (2007)]. Applied Physics Letters, 99 (23). 239904pp. doi:10.1063/1.3652753
Trupke, Thorsten, Würfel, Peter, Green, Martin A. (2004) Comment on “Three-dimensional photonic-crystal emitter for thermal photovoltaic power generation” [Appl. Phys. Lett. 83, 380 (2003)]. Applied Physics Letters, 84 (11). 1997-1998 doi:10.1063/1.1667269
Rosenits, Philipp, Roth, Thomas, Glunz, Stefan W., Beljakowa, Svetlana (2007) Determining the defect parameters of the deep aluminum-related defect center in silicon. Applied Physics Letters, 91 (12). 122109pp. doi:10.1063/1.2789378
Trupke, Thorsten, Green, Martin A., Würfel, Peter (2003) Optical gain in materials with indirect transitions. Journal of Applied Physics, 93 (11). 9058-9061 doi:10.1063/1.1571223
 
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