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Gu, Q. L., Ling, C. C., Brauer, G., Anwand, W., Skorupa, W., Hsu, Y. F., Djurišić, A. B., Zhu, C. Y., Fung, S., Lu, L. W. (2008) Deep level defects in a nitrogen-implanted ZnO homogeneous p-n junction. Applied Physics Letters, 92 (22). 222109pp. doi:10.1063/1.2940204

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Reference TypeJournal (article/letter/editorial)
TitleDeep level defects in a nitrogen-implanted ZnO homogeneous p-n junction
JournalApplied Physics Letters
AuthorsGu, Q. L.Author
Ling, C. C.Author
Brauer, G.Author
Anwand, W.Author
Skorupa, W.Author
Hsu, Y. F.Author
Djurišić, A. B.Author
Zhu, C. Y.Author
Fung, S.Author
Lu, L. W.Author
Year2008 (June 2)Volume92
Issue22
PublisherAIP Publishing
DOIdoi:10.1063/1.2940204Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8564382Long-form Identifiermindat:1:5:8564382:4
GUID0
Full ReferenceGu, Q. L., Ling, C. C., Brauer, G., Anwand, W., Skorupa, W., Hsu, Y. F., Djurišić, A. B., Zhu, C. Y., Fung, S., Lu, L. W. (2008) Deep level defects in a nitrogen-implanted ZnO homogeneous p-n junction. Applied Physics Letters, 92 (22). 222109pp. doi:10.1063/1.2940204
Plain TextGu, Q. L., Ling, C. C., Brauer, G., Anwand, W., Skorupa, W., Hsu, Y. F., Djurišić, A. B., Zhu, C. Y., Fung, S., Lu, L. W. (2008) Deep level defects in a nitrogen-implanted ZnO homogeneous p-n junction. Applied Physics Letters, 92 (22). 222109pp. doi:10.1063/1.2940204
In(2008, June) Applied Physics Letters Vol. 92 (22) AIP Publishing

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