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Roddaro, Stefano, Nilsson, Kristian, Astromskas, Gvidas, Samuelson, Lars, Wernersson, Lars-Erik, Karlström, Olov, Wacker, Andreas (2008) InAs nanowire metal-oxide-semiconductor capacitors. Applied Physics Letters, 92 (25). 253509pp. doi:10.1063/1.2949080

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Reference TypeJournal (article/letter/editorial)
TitleInAs nanowire metal-oxide-semiconductor capacitors
JournalApplied Physics Letters
AuthorsRoddaro, StefanoAuthor
Nilsson, KristianAuthor
Astromskas, GvidasAuthor
Samuelson, LarsAuthor
Wernersson, Lars-ErikAuthor
Karlström, OlovAuthor
Wacker, AndreasAuthor
Year2008 (June 23)Volume92
Issue25
PublisherAIP Publishing
DOIdoi:10.1063/1.2949080Search in ResearchGate
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Mindat Ref. ID8564962Long-form Identifiermindat:1:5:8564962:4
GUID0
Full ReferenceRoddaro, Stefano, Nilsson, Kristian, Astromskas, Gvidas, Samuelson, Lars, Wernersson, Lars-Erik, Karlström, Olov, Wacker, Andreas (2008) InAs nanowire metal-oxide-semiconductor capacitors. Applied Physics Letters, 92 (25). 253509pp. doi:10.1063/1.2949080
Plain TextRoddaro, Stefano, Nilsson, Kristian, Astromskas, Gvidas, Samuelson, Lars, Wernersson, Lars-Erik, Karlström, Olov, Wacker, Andreas (2008) InAs nanowire metal-oxide-semiconductor capacitors. Applied Physics Letters, 92 (25). 253509pp. doi:10.1063/1.2949080
In(2008, June) Applied Physics Letters Vol. 92 (25) AIP Publishing

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Astromskas, Gvidas, Storm, Kristian, Wernersson, Lars-Erik (2011) Transient studies on InAs/HfO2 nanowire capacitors. Applied Physics Letters, 98 (1). 13501pp. doi:10.1063/1.3533379
Astromskas, Gvidas, Storm, Kristian, Karlström, Olov, Caroff, Philippe, Borgström, Magnus, Wernersson, Lars-Erik (2010) Doping Incorporation in InAs nanowires characterized by capacitance measurements. Journal of Applied Physics, 108 (5). 54306pp. doi:10.1063/1.3475356
Nilsson, Henrik A., Caroff, Philippe, Thelander, Claes, Lind, Erik, Karlström, Olov, Wernersson, Lars-Erik (2010) Temperature dependent properties of InSb and InAs nanowire field-effect transistors. Applied Physics Letters, 96 (15). 153505pp. doi:10.1063/1.3402760
Ganjipour, Bahram, Nilsson, Henrik A., Mattias Borg, B., Wernersson, Lars-Erik, Samuelson, Lars, Xu, H. Q., Thelander, Claes (2011) GaSb nanowire single-hole transistor. Applied Physics Letters, 99 (26). 262104pp. doi:10.1063/1.3673328
Lind, Erik, Niquet, Yann-Michel, Mera, Hector, Wernersson, Lars-Erik (2010) Accumulation capacitance of narrow band gap metal-oxide-semiconductor capacitors. Applied Physics Letters, 96 (23). 233507pp. doi:10.1063/1.3449559
Wernersson, Lars-Erik, Lind, Erik, Samuelson, Lars, Löwgren, Truls, Ohlsson, Jonas (2007) Nanowire Field-Effect Transistor. Japanese Journal of Applied Physics, 46 (4) 2629-2631 doi:10.1143/jjap.46.2629
Nilsson, Henrik A., Caroff, Philippe, Lind, Erik, Pistol, Mats-Erik, Thelander, Claes, Wernersson, Lars-Erik (2011) Unipolar and bipolar operation of InAs/InSb nanowire heterostructure field-effect transistors. Journal of Applied Physics, 110 (6). 64510pp. doi:10.1063/1.3633742
Egard, Mikael, Ärlelid, Mats, Lind, Erik, Astromskas, Gvidas, Wernersson, Lars-Erik (2009) 20 GHz gated tunnel diode based UWB pulse generator. physica status solidi (c), 6 (6). 1399-1402 doi:10.1002/pssc.200881503
Mo, Jiongjiong, Lind, Erik, Roll, Guntrade, Wernersson, Lars-Erik (2014) Reduction of off-state drain leakage in InGaAs-based metal-oxide-semiconductor field-effect transistors. Applied Physics Letters, 105 (3). 33516pp. doi:10.1063/1.4891569
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