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Miranda, E., Falbo, P., Nafría, M., Crupi, F. (2008) Electron transport through electrically induced nanoconstrictions in HfSiON gate stacks. Applied Physics Letters, 92 (25). 253505pp. doi:10.1063/1.2949748

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Reference TypeJournal (article/letter/editorial)
TitleElectron transport through electrically induced nanoconstrictions in HfSiON gate stacks
JournalApplied Physics Letters
AuthorsMiranda, E.Author
Falbo, P.Author
Nafría, M.Author
Crupi, F.Author
Year2008 (June 23)Volume92
Issue25
PublisherAIP Publishing
DOIdoi:10.1063/1.2949748Search in ResearchGate
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Mindat Ref. ID8564981Long-form Identifiermindat:1:5:8564981:9
GUID0
Full ReferenceMiranda, E., Falbo, P., Nafría, M., Crupi, F. (2008) Electron transport through electrically induced nanoconstrictions in HfSiON gate stacks. Applied Physics Letters, 92 (25). 253505pp. doi:10.1063/1.2949748
Plain TextMiranda, E., Falbo, P., Nafría, M., Crupi, F. (2008) Electron transport through electrically induced nanoconstrictions in HfSiON gate stacks. Applied Physics Letters, 92 (25). 253505pp. doi:10.1063/1.2949748
In(2008, June) Applied Physics Letters Vol. 92 (25) AIP Publishing

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Gribelyuk, M. A., Callegari, A., Gusev, E. P., Copel, M., Buchanan, D. A. (2002) Interface reactions in ZrO2 based gate dielectric stacks. Journal of Applied Physics, 92 (3). 1232-1237 doi:10.1063/1.1486036
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