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Mangelinck, Dominique, Hoummada, Khalid (2008) Effect of stress on the transformation of Ni2Si into NiSi. Applied Physics Letters, 92 (25). 254101pp. doi:10.1063/1.2949751

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Reference TypeJournal (article/letter/editorial)
TitleEffect of stress on the transformation of Ni2Si into NiSi
JournalApplied Physics Letters
AuthorsMangelinck, DominiqueAuthor
Hoummada, KhalidAuthor
Year2008 (June 23)Volume92
Issue25
PublisherAIP Publishing
DOIdoi:10.1063/1.2949751Search in ResearchGate
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Mindat Ref. ID8564984Long-form Identifiermindat:1:5:8564984:6
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Full ReferenceMangelinck, Dominique, Hoummada, Khalid (2008) Effect of stress on the transformation of Ni2Si into NiSi. Applied Physics Letters, 92 (25). 254101pp. doi:10.1063/1.2949751
Plain TextMangelinck, Dominique, Hoummada, Khalid (2008) Effect of stress on the transformation of Ni2Si into NiSi. Applied Physics Letters, 92 (25). 254101pp. doi:10.1063/1.2949751
In(2008, June) Applied Physics Letters Vol. 92 (25) AIP Publishing

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Blum, I., Portavoce, A., Chow, L., Mangelinck, D., Hoummada, K., Tellouche, G., Carron, V. (2010) B diffusion in implanted Ni2Si and NiSi layers. Applied Physics Letters, 96 (5). 54102pp. doi:10.1063/1.3303988
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Hoummada, Khalid, Dahlem, Franck, Panciera, Federico, Bustarret, Etienne, Marcenat, C., DĂ©barre, Dominique, El Amraoui, Youssef, Mangelinck, Dominique (2023) Analysis of superconducting silicon epilayers by atom probe tomography: composition and evaporation field. The European Physical Journal Applied Physics, 98. 40 doi:10.1051/epjap/2023230018
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Aboelfotoh, M. O., Tawancy, H. M., d’Heurle, F. M. (1987) Transmission electron microscope study of the formation of Ni2Si and NiSi on amorphous silicon. Applied Physics Letters, 50 (20). 1453-1454 doi:10.1063/1.97799
 
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