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Pedersen, Jesper Goor, Richter, Jacob, Brandbyge, Mads, Thomsen, Erik V., Hansen, Ole (2008) Engineering piezoresistivity using biaxially strained silicon. Applied Physics Letters, 93 (26). 263501pp. doi:10.1063/1.3059557

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Reference TypeJournal (article/letter/editorial)
TitleEngineering piezoresistivity using biaxially strained silicon
JournalApplied Physics Letters
AuthorsPedersen, Jesper GoorAuthor
Richter, JacobAuthor
Brandbyge, MadsAuthor
Thomsen, Erik V.Author
Hansen, OleAuthor
Year2008 (December 29)Volume93
Issue26
PublisherAIP Publishing
DOIdoi:10.1063/1.3059557Search in ResearchGate
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Mindat Ref. ID8570367Long-form Identifiermindat:1:5:8570367:6
GUID0
Full ReferencePedersen, Jesper Goor, Richter, Jacob, Brandbyge, Mads, Thomsen, Erik V., Hansen, Ole (2008) Engineering piezoresistivity using biaxially strained silicon. Applied Physics Letters, 93 (26). 263501pp. doi:10.1063/1.3059557
Plain TextPedersen, Jesper Goor, Richter, Jacob, Brandbyge, Mads, Thomsen, Erik V., Hansen, Ole (2008) Engineering piezoresistivity using biaxially strained silicon. Applied Physics Letters, 93 (26). 263501pp. doi:10.1063/1.3059557
In(2008, December) Applied Physics Letters Vol. 93 (26) AIP Publishing

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Richter, J., Pedersen, J., Brandbyge, M., Thomsen, E. V., Hansen, O. (2008) Piezoresistance in p-type silicon revisited. Journal of Applied Physics, 104 (2). 23715pp. doi:10.1063/1.2960335
Richter, J., Pedersen, J. G., Brandbyge, M., Thomsen, E. V., Hansen, O. (2011) Erratum: “Piezoresistance in p-type silicon revisited” [J. Appl. Phys. 104, 023715 (2008)]. Journal of Applied Physics, 110 (3). 39904pp. doi:10.1063/1.3620495
Hansen, Ole, Reck, Kasper, Thomsen, Erik V. (2008) Giant geometrically amplified piezoresistance in metal-semiconductor hybrid resistors. Journal of Applied Physics, 104 (11). 114510pp. doi:10.1063/1.3033558
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Crovetto, Andrea, Palsgaard, Mattias L. N., Gunst, Tue, Markussen, Troels, Stokbro, Kurt, Brandbyge, Mads, Hansen, Ole (2017) Interface band gap narrowing behind open circuit voltage losses in Cu2ZnSnS4 solar cells. Applied Physics Letters, 110 (8). 83903pp. doi:10.1063/1.4976830
Pedersen, Thomas Garm, Pedersen, Jesper Goor (2012) Transport in graphene antidot barriers and tunneling devices. Journal of Applied Physics, 112 (11). 113715pp. doi:10.1063/1.4768844
Lee, Hosun, Jones, E. D. (1996) Dielectric function of biaxially strained silicon layer. Applied Physics Letters, 68 (22). 3153-3155 doi:10.1063/1.115808
Hansen, Kim, Brandbyge, Mads (2004) Current-voltage relation for thin tunnel barriers: Parabolic barrier model. Journal of Applied Physics, 95 (7). 3582-3586 doi:10.1063/1.1650896
Jacobsen, Rune S., Andersen, Karin N., Borel, Peter I., Fage-Pedersen, Jacob, Frandsen, Lars H., Hansen, Ole, Kristensen, Martin, Lavrinenko, Andrei V., Moulin, Gaid, Ou, Haiyan, Peucheret, Christophe, Zsigri, Beáta, Bjarklev, Anders (2006) Strained silicon as a new electro-optic material. Nature, 441 (7090). 199-202 doi:10.1038/nature04706
Khurgin, Jacob B., Jin, F., Obeidat, A. (1998) Engineering of the magnetic properties of strained quantum dots. Applied Physics Letters, 73 (26). 3944-3946 doi:10.1063/1.122944
Hitzbleck, Martina, Kaigala, Govind V., Delamarche, Emmanuel, Lovchik, Robert D. (2014) The floating microfluidic probe: Distance control between probe and sample using hydrodynamic levitation. Applied Physics Letters, 104 (26). 263501pp. doi:10.1063/1.4886117
 
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