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Street, R. A., Kakalios, J., Hack, M. (1988) Electron drift mobility in doped amorphous silicon. Physical Review B, 38 (8) 5603-5609 doi:10.1103/physrevb.38.5603

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Reference TypeJournal (article/letter/editorial)
TitleElectron drift mobility in doped amorphous silicon
JournalPhysical Review B
AuthorsStreet, R. A.Author
Kakalios, J.Author
Hack, M.Author
Year1988 (September 15)Volume38
Issue8
PublisherAmerican Physical Society (APS)
DOIdoi:10.1103/physrevb.38.5603Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID14101050Long-form Identifiermindat:1:5:14101050:4
GUID0
Full ReferenceStreet, R. A., Kakalios, J., Hack, M. (1988) Electron drift mobility in doped amorphous silicon. Physical Review B, 38 (8) 5603-5609 doi:10.1103/physrevb.38.5603
Plain TextStreet, R. A., Kakalios, J., Hack, M. (1988) Electron drift mobility in doped amorphous silicon. Physical Review B, 38 (8) 5603-5609 doi:10.1103/physrevb.38.5603
In(1988, September) Physical Review B Vol. 38 (8) American Physical Society (APS)

See Also

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Kakalios, J., Street, R. A. (1986) Electronic transport in doped amorphous silicon. Physical Review B, 34 (8) 6014-6017 doi:10.1103/physrevb.34.6014
Street, R. A., Hack, M., Jackson, W. B. (1988) Mechanisms of thermal equilibration in doped amorphous silicon. Physical Review B, 37 (8) 4209-4224 doi:10.1103/physrevb.37.4209
Street, R. A., Kakalios, J., Hayes, T. M. (1986) Thermal equilibration in doped amorphous silicon. Physical Review B, 34 (4) 3030-3033 doi:10.1103/physrevb.34.3030
Overhof, H., Silver, M. (1989) Comment on ‘‘Electron drift mobility in doped amorphous silicon’’. Physical Review B, 39 (14) 10426-10428 doi:10.1103/physrevb.39.10426
Street, R., Kakalios, J., Tsai, C., Hayes, T. (1987) Thermal-equilibrium processes in amorphous silicon. Physical Review B, 35 (3) 1316-1333 doi:10.1103/physrevb.35.1316
Parker, M. A., Schiff, E. A. (1988) Anisotropic drift mobility in hydrogenated amorphous silicon. Physical Review B, 37 (17) 10426-10428 doi:10.1103/physrevb.37.10426
Street, R. A., Kakalios, J. (1986) Bias annealing of doped amorphous silicon. Philosophical Magazine B, 54 (1). doi:10.1080/13642818608243173
Sharma, D. K., Narasimhan, K. L., Periasamy, N., Bapat, D. R. (1991) Temperature dependence of the electron drift mobility in doped and undoped amorphous silicon. Physical Review B, 44 (23) 12806-12808 doi:10.1103/physrevb.44.12806
Parman, C. E., Israeloff, N. E., Kakalios, J. (1993) Conductance fluctuations in doped hydrogenated amorphous silicon. Physical Review B, 47 (19) 12578-12589 doi:10.1103/physrevb.47.12578
Kakalios, J., Street, R. A., Jackson, W. B. (1987) Stretched-exponential relaxation arising from dispersive diffusion of hydrogen in amorphous silicon. Physical Review Letters, 59 (9). 1037-1040 doi:10.1103/physrevlett.59.1037
Vanderhaghen, R. (1988) Electron-transport parameters and tail-state distribution in hydrogenated amorphous silicon obtained from position and tail-state matrix simulation of drift experiments. Physical Review B, 38 (15) 10755-10775 doi:10.1103/physrevb.38.10755
 
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