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Overhof, H., Silver, M. (1989) Comment on ‘‘Electron drift mobility in doped amorphous silicon’’. Physical Review B, 39 (14) 10426-10428 doi:10.1103/physrevb.39.10426

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Reference TypeJournal (article/letter/editorial)
TitleComment on ‘‘Electron drift mobility in doped amorphous silicon’’
JournalPhysical Review B
AuthorsOverhof, H.Author
Silver, M.Author
Year1989 (May 15)Volume39
Issue14
PublisherAmerican Physical Society (APS)
DOIdoi:10.1103/physrevb.39.10426Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID14101877Long-form Identifiermindat:1:5:14101877:7
GUID0
Full ReferenceOverhof, H., Silver, M. (1989) Comment on ‘‘Electron drift mobility in doped amorphous silicon’’. Physical Review B, 39 (14) 10426-10428 doi:10.1103/physrevb.39.10426
Plain TextOverhof, H., Silver, M. (1989) Comment on ‘‘Electron drift mobility in doped amorphous silicon’’. Physical Review B, 39 (14) 10426-10428 doi:10.1103/physrevb.39.10426
In(1989, May) Physical Review B Vol. 39 (14) American Physical Society (APS)

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Parker, M. A., Schiff, E. A. (1988) Anisotropic drift mobility in hydrogenated amorphous silicon. Physical Review B, 37 (17) 10426-10428 doi:10.1103/physrevb.37.10426
Street, R. A., Kakalios, J., Hack, M. (1988) Electron drift mobility in doped amorphous silicon. Physical Review B, 38 (8) 5603-5609 doi:10.1103/physrevb.38.5603
Overhof, H., Beyer, W., Thomas, P. (1997) Comment on “Thermopower and conductivity activation energies in hydrogenated amorphous silicon”. Physical Review B, 56 (19) 12649-12650 doi:10.1103/physrevb.56.12649
Gal, M. (1989) Comment on ‘‘Optically detected magnetic resonance in oxygen-doped GaP’’. Physical Review B, 39 (14) 10422-10423 doi:10.1103/physrevb.39.10422
Sharma, D. K., Narasimhan, K. L., Periasamy, N., Bapat, D. R. (1991) Temperature dependence of the electron drift mobility in doped and undoped amorphous silicon. Physical Review B, 44 (23) 12806-12808 doi:10.1103/physrevb.44.12806
Godlewski, M., Monemar, B. (1989) Reply to ‘‘Comment on ‘Optically detected magnetic resonance in oxygen-doped GaP’ ’’. Physical Review B, 39 (14) 10424-10425 doi:10.1103/physrevb.39.10424
Branz, Howard M. (1989) Dangling bonds in doped amorphous silicon: Equilibrium, relaxation, and transition energies. Physical Review B, 39 (8) 5107-5115 doi:10.1103/physrevb.39.5107
Castilho, J. H., Barberis, G. E., Rettori, C., Marques, F. C., Chambouleyron, I., Alvarez, F. (1989) Electron spin resonance in amorphous silicon doped with Gd. Physical Review B, 39 (12) 8398-8402 doi:10.1103/physrevb.39.8398
Price, Peter J. (1985) Comment on "Electron mobility in modulation-doped heterostructures". Physical Review B, 32 (4) 2643-2644 doi:10.1103/physrevb.32.2643
Walukiewicz, W., Ruda, H. E., Lagowski, J., Gatos, H. C. (1985) Response to ‘‘Comment on ‘Electron mobility in modulation-doped heterostructures’ ’’. Physical Review B, 32 (4) 2645-2646 doi:10.1103/physrevb.32.2645
Gu, Qing, Schiff, E. A., Chévrier, Jean-Baptiste, Equer, Bernard (1995) High-field electron-drift measurements and the mobility edge in hydrogenated amorphous silicon. Physical Review B, 52 (8) 5695-5707 doi:10.1103/physrevb.52.5695
 
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