Log InRegister
Quick Links : The Mindat ManualThe Rock H. Currier Digital LibraryMindat Newsletter [Free Download]
Home PageAbout MindatThe Mindat ManualHistory of MindatCopyright StatusWho We AreContact UsAdvertise on Mindat
Donate to MindatCorporate SponsorshipSponsor a PageSponsored PagesMindat AdvertisersAdvertise on Mindat
Learning CenterWhat is a mineral?The most common minerals on earthInformation for EducatorsMindat ArticlesThe ElementsThe Rock H. Currier Digital LibraryGeologic Time
Minerals by PropertiesMinerals by ChemistryMineral Visual ExplorerAdvanced Locality SearchRandom MineralRandom LocalitySearch by minIDLocalities Near MeSearch ArticlesSearch GlossaryMore Search Options
Search For:
Mineral Name:
Locality Name:
Keyword(s):
 
The Mindat ManualAdd a New PhotoRate PhotosLocality Edit ReportCoordinate Completion ReportAdd Glossary Item
Mining CompaniesStatisticsUsersMineral MuseumsClubs & OrganizationsMineral Shows & EventsThe Mindat DirectoryDevice SettingsThe Mineral QuizTime Machine
Photo SearchPhoto GalleriesSearch by ColorPhoto Colour ExplorerNew Photos TodayNew Photos YesterdayMembers' Photo GalleriesPast Photo of the Day GalleryPhotography

Bhatia, K. L., Parthasarathy, G., Sharma, Ashwani, Gopal, E. S. R. (1988) Carrier-sign reversal in Bi-doped bulk amorphous semiconductorsGe20Te80−xBix. Physical Review B, 38 (9) 6342-6344 doi:10.1103/physrevb.38.6342

Advanced
   -   Only viewable:
Reference TypeJournal (article/letter/editorial)
TitleCarrier-sign reversal in Bi-doped bulk amorphous semiconductorsGe20Te80−xBix
JournalPhysical Review B
AuthorsBhatia, K. L.Author
Parthasarathy, G.Author
Sharma, AshwaniAuthor
Gopal, E. S. R.Author
Year1988 (September 15)Volume38
Issue9
PublisherAmerican Physical Society (APS)
DOIdoi:10.1103/physrevb.38.6342Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID14101160Long-form Identifiermindat:1:5:14101160:0
GUID0
Full ReferenceBhatia, K. L., Parthasarathy, G., Sharma, Ashwani, Gopal, E. S. R. (1988) Carrier-sign reversal in Bi-doped bulk amorphous semiconductorsGe20Te80−xBix. Physical Review B, 38 (9) 6342-6344 doi:10.1103/physrevb.38.6342
Plain TextBhatia, K. L., Parthasarathy, G., Sharma, Ashwani, Gopal, E. S. R. (1988) Carrier-sign reversal in Bi-doped bulk amorphous semiconductorsGe20Te80−xBix. Physical Review B, 38 (9) 6342-6344 doi:10.1103/physrevb.38.6342
In(1988, September) Physical Review B Vol. 38 (9) American Physical Society (APS)

See Also

These are possibly similar items as determined by title/reference text matching only.

Gosain, D. P., Bhatia, K. L., Parthasarathy, G., Gopal, E. S. R. (1985) Pressure-induced structural transformations in Bi-doped amorphous germanium sulfide. Physical Review B, 32 (4) 2727-2730 doi:10.1103/physrevb.32.2727
Bhatia, K. L., Gosain, D. P., Parthasarathy, G., Gopal, E. S. R. (1986) Bismuth-doped amorphous germanium sulfide semiconductors. Physical Review B, 34 (12) 8786-8793 doi:10.1103/physrevb.34.8786
Bhatia, K.L., Parthasarathy, G., Gopal, E.S.R. (1983) Electrical transport in Bi doped n-type amorphous semiconductors (GeSe3.5)100−xBix at high pressure. Journal of Non-Crystalline Solids, 59. 1019-1021 doi:10.1016/0022-3093(83)90340-x
Bhatia, K. L., Gosain, D. P., Parthasarathy, G., Gopal, E. S. R. (1986) Pressure-induced first-order transition in layered crystalline semiconductor GeSe to a metallic phase. Physical Review B, 33 (2) 1492-1494 doi:10.1103/physrevb.33.1492
Gosain, D. P., Bhatia, K. L., Parthasarathy, G., Gopal, E. S. R. (1987) Impurity states in Sb‐doped amorphous semiconductors. Journal of Applied Physics, 62 (6). 2313-2319 doi:10.1063/1.339491
Bhatia, K. L., Gosain, D. P., Bhatnagar, V. K. (1987) Evidence of two Bi sites from EPR ofMn2+in Bi-doped amorphous germanium chalcogenides. Physical Review B, 35 (9) 4503-4506 doi:10.1103/physrevb.35.4503
Gosain, D.P., Bhatia, K.L., Parthasarathy, G., Gopal, E.S.R. (1987) Structural Transformation in N-Type Bi Doped Semiconducting Glasses Ge20S80-xBix. Key Engineering Materials, 13. 351-354 doi:10.4028/www.scientific.net/kem.13-15.351
Bhatia, K.L., Parthasarathy, G., Gopal, E.S.R. (1985) Pressure induced effects in bulk amorphous n-type semiconductors (GeSe3.5)100−xBix. Journal of Non-Crystalline Solids, 69 (2) 189-202 doi:10.1016/0022-3093(85)90020-1
Bhatia, K. L., Gosain, D. P., Parthasarathy, G., Gopal, E. S. R. (1986) Morphological structure of bismuth-doped n-type amorphous germanium sulphide semiconductors. Journal of Materials Science Letters, 5 (12) 1281-1284 doi:10.1007/bf01729393
Bhatia, K. L., Parthasarathy, G., Gosain, D. P., Gopal, E. S. R. (1985) Role of dopants in pressure-induced effects in glassy GeSe3·5 containing Bi and Sb. Philosophical Magazine B, 51 (6). doi:10.1080/13642818508243146
Bhatia, K. L., Gosain, D. P., Parthasarasthy, G., Gopal, E. S. T., Sharma, A. K. (1986) Structural properties of doped n-type amorphous (GeSe3.5)100−x Bi x. Journal of Materials Science Letters, 5 (2) 181-182 doi:10.1007/bf01672042
 
and/or  
Mindat.org® is an outreach project of the Hudson Institute of Mineralogy, a 501(c)(3) not-for-profit organization. Mindat® and mindat.org® are registered trademarks of the Hudson Institute of Mineralogy.
Copyright © mindat.org and the Hudson Institute of Mineralogy 1993-2026, except where stated. Most political location boundaries are © OpenStreetMap contributors. Mindat.org relies on the contributions of thousands of members and supporters. Founded in 2000 by Jolyon Ralph and Ida Chau.
To cite: Ralph, J., Von Bargen, D., Martynov, P., Zhang, J., Que, X., Prabhu, A., Morrison, S. M., Li, W., Chen, W., & Ma, X. (2025). Mindat.org: The open access mineralogy database to accelerate data-intensive geoscience research. American Mineralogist, 110(6), 833–844. doi:10.2138/am-2024-9486.
Privacy Policy - Terms & Conditions - Contact Us / DMCA issues - Report a bug/vulnerability Current server date and time: June 7, 2026 14:56:01
Go to top of page