Log InRegister
Quick Links : The Mindat ManualThe Rock H. Currier Digital LibraryMindat Newsletter [Free Download]
Home PageAbout MindatThe Mindat ManualHistory of MindatCopyright StatusWho We AreContact UsAdvertise on Mindat
Donate to MindatCorporate SponsorshipSponsor a PageSponsored PagesMindat AdvertisersAdvertise on Mindat
Learning CenterWhat is a mineral?The most common minerals on earthInformation for EducatorsMindat ArticlesThe ElementsThe Rock H. Currier Digital LibraryGeologic Time
Minerals by PropertiesMinerals by ChemistryMineral Visual ExplorerAdvanced Locality SearchRandom MineralRandom LocalitySearch by minIDLocalities Near MeSearch ArticlesSearch GlossaryMore Search Options
Search For:
Mineral Name:
Locality Name:
Keyword(s):
 
The Mindat ManualAdd a New PhotoRate PhotosLocality Edit ReportCoordinate Completion ReportAdd Glossary Item
Mining CompaniesStatisticsUsersMineral MuseumsClubs & OrganizationsMineral Shows & EventsThe Mindat DirectoryDevice SettingsThe Mineral QuizTime Machine
Photo SearchPhoto GalleriesSearch by ColorPhoto Colour ExplorerNew Photos TodayNew Photos YesterdayMembers' Photo GalleriesPast Photo of the Day GalleryPhotography

Bhatia, K.L., Parthasarathy, G., Gopal, E.S.R. (1983) Electrical transport in Bi doped n-type amorphous semiconductors (GeSe3.5)100−xBix at high pressure. Journal of Non-Crystalline Solids, 59. 1019-1021 doi:10.1016/0022-3093(83)90340-x

Advanced
   -   Only viewable:
Reference TypeJournal (article/letter/editorial)
TitleElectrical transport in Bi doped n-type amorphous semiconductors (GeSe3.5)100−xBix at high pressure
JournalJournal of Non-Crystalline Solids
AuthorsBhatia, K.L.Author
Parthasarathy, G.Author
Gopal, E.S.R.Author
Year1983 (December)Volume59
PublisherElsevier BV
DOIdoi:10.1016/0022-3093(83)90340-xSearch in ResearchGate
Generate Citation Formats
Mindat Ref. ID620702Long-form Identifiermindat:1:5:620702:5
GUID0
Full ReferenceBhatia, K.L., Parthasarathy, G., Gopal, E.S.R. (1983) Electrical transport in Bi doped n-type amorphous semiconductors (GeSe3.5)100−xBix at high pressure. Journal of Non-Crystalline Solids, 59. 1019-1021 doi:10.1016/0022-3093(83)90340-x
Plain TextBhatia, K.L., Parthasarathy, G., Gopal, E.S.R. (1983) Electrical transport in Bi doped n-type amorphous semiconductors (GeSe3.5)100−xBix at high pressure. Journal of Non-Crystalline Solids, 59. 1019-1021 doi:10.1016/0022-3093(83)90340-x
In(1983) Journal of Non-Crystalline Solids Vol. 59. Elsevier BV

See Also

These are possibly similar items as determined by title/reference text matching only.

Bhatia, K.L., Parthasarathy, G., Gopal, E.S.R. (1985) Pressure induced effects in bulk amorphous n-type semiconductors (GeSe3.5)100−xBix. Journal of Non-Crystalline Solids, 69 (2) 189-202 doi:10.1016/0022-3093(85)90020-1
Bhatia, K.L. (1983) Structural changes induced by Bi doping in n-type amorphous (GeSe3.5) 100−xBix. Journal of Non-Crystalline Solids, 54 (1) 173-177 doi:10.1016/0022-3093(83)90091-1
Bhatia, K.L., Sharma, A.K. (1986) Optical constants of doped n-type vitreous semiconductors (GeSe3.5)100−xBix. Journal of Non-Crystalline Solids, 81 (3) 285-291 doi:10.1016/0022-3093(86)90497-7
Sharma, Ashwani K., Bhatia, K.L. (1989) Frequency-dependent electrical conductivity of bismuth-modified amorphous semiconductors (GeSe3.5)100−xBix. Journal of Non-Crystalline Solids, 109 (1) 95-104 doi:10.1016/0022-3093(89)90447-x
Bhatia, K.L., Parthasarathy, G., Gopal, E.S.R. (1984) Electrical transport in layered crystalline semiconductors GeS doped with Ag, P impurities at high pressure. Journal of Physics and Chemistry of Solids, 45. 1189-1194 doi:10.1016/0022-3697(84)90015-5
Bhatia, K.L., Gosain, D.P., Parthasarathy, G., Gopal, E.S.R. (1986) On the structural features of doped amorphous chalcogenide semiconductors. Journal of Non-Crystalline Solids, 86 (1) 65-71 doi:10.1016/0022-3093(86)90475-8
Takahashi, Takashi (1984) Comment on “structural changes induced by Bi doping in n-type amorphous (GeSe3.5)100−xBix” by K.L. Bhatia. Journal of Non-Crystalline Solids, 63 (3) 413-414 doi:10.1016/0022-3093(84)90107-8
Gosain, D.P., Bhatia, K.L., Parthasarathy, G., Gopal, E.S.R. (1987) Structural Transformation in N-Type Bi Doped Semiconducting Glasses Ge20S80-xBix. Key Engineering Materials, 13. 351-354 doi:10.4028/www.scientific.net/kem.13-15.351
Bhatia, K.L., Bhatnagar, V.K. (1988) Photoacoustic spectra of amorphous semiconductors Ge20S80−xBix. Journal of Non-Crystalline Solids, 104 (1) 17-21 doi:10.1016/0022-3093(88)90175-5
Bhatnagar, V.K, Bhatia, K.L (1990) Frequency dependent electrical transport in bismuth-modified amorphous germanium sulfide semiconductors. Journal of Non-Crystalline Solids, 119 (2) 214-231 doi:10.1016/0022-3093(90)90845-d
Lakshmikumar, S.T., Padaki, V.C., Mallya, R.M., Gopal, E.S.R. (1981) Time dependence of electrical resistance at high pressure in some tellurium based amorphous alloys. Journal of Non-Crystalline Solids, 46 (1) 33-43 doi:10.1016/0022-3093(81)90072-7
 
and/or  
Mindat.org® is an outreach project of the Hudson Institute of Mineralogy, a 501(c)(3) not-for-profit organization. Mindat® and mindat.org® are registered trademarks of the Hudson Institute of Mineralogy.
Copyright © mindat.org and the Hudson Institute of Mineralogy 1993-2026, except where stated. Most political location boundaries are © OpenStreetMap contributors. Mindat.org relies on the contributions of thousands of members and supporters. Founded in 2000 by Jolyon Ralph and Ida Chau.
To cite: Ralph, J., Von Bargen, D., Martynov, P., Zhang, J., Que, X., Prabhu, A., Morrison, S. M., Li, W., Chen, W., & Ma, X. (2025). Mindat.org: The open access mineralogy database to accelerate data-intensive geoscience research. American Mineralogist, 110(6), 833–844. doi:10.2138/am-2024-9486.
Privacy Policy - Terms & Conditions - Contact Us / DMCA issues - Report a bug/vulnerability Current server date and time: June 8, 2026 15:12:05
Go to top of page