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Sharma, Ashwani K., Bhatia, K.L. (1989) Frequency-dependent electrical conductivity of bismuth-modified amorphous semiconductors (GeSe3.5)100−xBix. Journal of Non-Crystalline Solids, 109 (1) 95-104 doi:10.1016/0022-3093(89)90447-x

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Reference TypeJournal (article/letter/editorial)
TitleFrequency-dependent electrical conductivity of bismuth-modified amorphous semiconductors (GeSe3.5)100−xBix
JournalJournal of Non-Crystalline Solids
AuthorsSharma, Ashwani K.Author
Bhatia, K.L.Author
Year1989 (May)Volume109
Issue1
PublisherElsevier BV
DOIdoi:10.1016/0022-3093(89)90447-xSearch in ResearchGate
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Mindat Ref. ID628795Long-form Identifiermindat:1:5:628795:9
GUID0
Full ReferenceSharma, Ashwani K., Bhatia, K.L. (1989) Frequency-dependent electrical conductivity of bismuth-modified amorphous semiconductors (GeSe3.5)100−xBix. Journal of Non-Crystalline Solids, 109 (1) 95-104 doi:10.1016/0022-3093(89)90447-x
Plain TextSharma, Ashwani K., Bhatia, K.L. (1989) Frequency-dependent electrical conductivity of bismuth-modified amorphous semiconductors (GeSe3.5)100−xBix. Journal of Non-Crystalline Solids, 109 (1) 95-104 doi:10.1016/0022-3093(89)90447-x
In(1989, May) Journal of Non-Crystalline Solids Vol. 109 (1) Elsevier BV

See Also

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Bhatia, K.L., Parthasarathy, G., Gopal, E.S.R. (1983) Electrical transport in Bi doped n-type amorphous semiconductors (GeSe3.5)100−xBix at high pressure. Journal of Non-Crystalline Solids, 59. 1019-1021 doi:10.1016/0022-3093(83)90340-x
Bhatia, K.L., Sharma, A.K. (1986) Optical constants of doped n-type vitreous semiconductors (GeSe3.5)100−xBix. Journal of Non-Crystalline Solids, 81 (3) 285-291 doi:10.1016/0022-3093(86)90497-7
Bhatia, K.L., Parthasarathy, G., Gopal, E.S.R. (1985) Pressure induced effects in bulk amorphous n-type semiconductors (GeSe3.5)100−xBix. Journal of Non-Crystalline Solids, 69 (2) 189-202 doi:10.1016/0022-3093(85)90020-1
Bhatnagar, V.K, Bhatia, K.L (1990) Frequency dependent electrical transport in bismuth-modified amorphous germanium sulfide semiconductors. Journal of Non-Crystalline Solids, 119 (2) 214-231 doi:10.1016/0022-3093(90)90845-d
Bhatia, K.L. (1983) Structural changes induced by Bi doping in n-type amorphous (GeSe3.5) 100−xBix. Journal of Non-Crystalline Solids, 54 (1) 173-177 doi:10.1016/0022-3093(83)90091-1
Bhatia, K.L., Bhatnagar, V.K. (1988) Photoacoustic spectra of amorphous semiconductors Ge20S80−xBix. Journal of Non-Crystalline Solids, 104 (1) 17-21 doi:10.1016/0022-3093(88)90175-5
Takahashi, Takashi (1984) Comment on “structural changes induced by Bi doping in n-type amorphous (GeSe3.5)100−xBix” by K.L. Bhatia. Journal of Non-Crystalline Solids, 63 (3) 413-414 doi:10.1016/0022-3093(84)90107-8
Sharma, A.K., Bhatia, K.L., Bhatnagar, V.K., Malik, S.K., Krätschmer, W. (1989) Far-infrared transmission spectra of doped amorphous germanium chalcogenide semiconductors. Journal of Non-Crystalline Solids, 108 (3) 309-314 doi:10.1016/0022-3093(89)90302-5
Sotiropoulos, J, Fuhs, W (1989) Electronic structure of bismuth modified a-Ge25Se75-xBix films. Journal of Non-Crystalline Solids, 114. 97-99 doi:10.1016/0022-3093(89)90080-x
Bhatia, K.L., Katyal, S.C., Sharma, Ashwani K. (1983) On the glass formation tendency in (PbS)x·(M2S3)1−x (M = As, Sb) Journal of Non-Crystalline Solids, 58 (1) 27-34 doi:10.1016/0022-3093(83)90099-6
Vikhrov, S.P., Ampilogov, V.N. (1987) Electronic conductivity of (Gese3.5)100 − xBix and (GeS3.5)100 − xBix in solid and liquid states. Journal of Non-Crystalline Solids, 90 (1) 441-444 doi:10.1016/s0022-3093(87)80459-3
 
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