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Sharma, A.K., Bhatia, K.L., Bhatnagar, V.K., Malik, S.K., Krätschmer, W. (1989) Far-infrared transmission spectra of doped amorphous germanium chalcogenide semiconductors. Journal of Non-Crystalline Solids, 108 (3) 309-314 doi:10.1016/0022-3093(89)90302-5

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Reference TypeJournal (article/letter/editorial)
TitleFar-infrared transmission spectra of doped amorphous germanium chalcogenide semiconductors
JournalJournal of Non-Crystalline Solids
AuthorsSharma, A.K.Author
Bhatia, K.L.Author
Bhatnagar, V.K.Author
Malik, S.K.Author
Krätschmer, W.Author
Year1989 (April)Volume108
Issue3
PublisherElsevier BV
DOIdoi:10.1016/0022-3093(89)90302-5Search in ResearchGate
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Mindat Ref. ID628772Long-form Identifiermindat:1:5:628772:0
GUID0
Full ReferenceSharma, A.K., Bhatia, K.L., Bhatnagar, V.K., Malik, S.K., Krätschmer, W. (1989) Far-infrared transmission spectra of doped amorphous germanium chalcogenide semiconductors. Journal of Non-Crystalline Solids, 108 (3) 309-314 doi:10.1016/0022-3093(89)90302-5
Plain TextSharma, A.K., Bhatia, K.L., Bhatnagar, V.K., Malik, S.K., Krätschmer, W. (1989) Far-infrared transmission spectra of doped amorphous germanium chalcogenide semiconductors. Journal of Non-Crystalline Solids, 108 (3) 309-314 doi:10.1016/0022-3093(89)90302-5
In(1989, April) Journal of Non-Crystalline Solids Vol. 108 (3) Elsevier BV

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Bhatia, K.L., Bhatnagar, V.K. (1988) Photoacoustic spectra of amorphous semiconductors Ge20S80−xBix. Journal of Non-Crystalline Solids, 104 (1) 17-21 doi:10.1016/0022-3093(88)90175-5
Malik, S.K., Bhatia, K.L., Kishore, N., Phor, J.S. (1992) EPR of Mn-doped Pb-modified amorphous germanium chalcogenide semiconductors. Journal of Non-Crystalline Solids, 142. 55-62 doi:10.1016/s0022-3093(05)80006-7
Bhatnagar, V.K, Bhatia, K.L (1990) Frequency dependent electrical transport in bismuth-modified amorphous germanium sulfide semiconductors. Journal of Non-Crystalline Solids, 119 (2) 214-231 doi:10.1016/0022-3093(90)90845-d
Bhatia, K.L., Sharma, A.K. (1986) Optical constants of doped n-type vitreous semiconductors (GeSe3.5)100−xBix. Journal of Non-Crystalline Solids, 81 (3) 285-291 doi:10.1016/0022-3093(86)90497-7
Sharma, Ashwani K., Bhatia, K.L. (1989) Frequency-dependent electrical conductivity of bismuth-modified amorphous semiconductors (GeSe3.5)100−xBix. Journal of Non-Crystalline Solids, 109 (1) 95-104 doi:10.1016/0022-3093(89)90447-x
Bhatia, K.L., Gosain, D.P., Parthasarathy, G., Gopal, E.S.R. (1986) On the structural features of doped amorphous chalcogenide semiconductors. Journal of Non-Crystalline Solids, 86 (1) 65-71 doi:10.1016/0022-3093(86)90475-8
Bhatia, K.L, Katyal, S.C, Venugopalan, S (1979) Far infrared transmission and structure of PbGeS semiconducting glasses. Journal of Non-Crystalline Solids, 31 (3) 333-337 doi:10.1016/0022-3093(79)90145-5
Bhatia, K.L., Bhatnagar, V.K., Gosain, D.P. (1987) Electron Spin Resonance of Mn2+ in Bi Doped N-Type Amorphous Germanium Chalcogenide Semiconductors. Key Engineering Materials, 13. 623-626 doi:10.4028/www.scientific.net/kem.13-15.623
Matsuishi, Kiyoto, Kasamura, Hideaki, Onari, Seinosuke, Arai, Toshihiro (1987) Far infrared absorption spectra of chalcogenide amorphous semiconductors and the spatial charge fluctuation. Journal of Non-Crystalline Solids, 97. 1187-1190 doi:10.1016/0022-3093(87)90283-3
Singh, Partap, Bhatia, K.L., Kishore, N., Singh, Mahender, Malik, S.K., Kanjilal, D. (1995) Doping of chalcogenide glassy semiconductor by implanting Ni ions. Journal of Non-Crystalline Solids, 191 (1) 146-154 doi:10.1016/0022-3093(95)00288-x
Bhatnagar, V.K., Bhatia, K.L., Gosain, D.P., Jain, V.K. (1987) Effect of transition metal impurity MN on the electronic properties of amorphous semiconductor Ge20S80 − xBix. Journal of Non-Crystalline Solids, 92 (2) 302-312 doi:10.1016/s0022-3093(87)80048-0
 
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