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Hurle, D. T. J. (1989) Comment on ‘‘Binding and formation energies of native defect pairs in GaAs’’. Physical Review B, 39 (11) 8005 doi:10.1103/physrevb.39.8005

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Reference TypeJournal (article/letter/editorial)
TitleComment on ‘‘Binding and formation energies of native defect pairs in GaAs’’
JournalPhysical Review B
AuthorsHurle, D. T. J.Author
Year1989 (April 15)Volume39
Issue11
PublisherAmerican Physical Society (APS)
DOIdoi:10.1103/physrevb.39.8005Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID14101552Long-form Identifiermindat:1:5:14101552:3
GUID0
Full ReferenceHurle, D. T. J. (1989) Comment on ‘‘Binding and formation energies of native defect pairs in GaAs’’. Physical Review B, 39 (11) 8005 doi:10.1103/physrevb.39.8005
Plain TextHurle, D. T. J. (1989) Comment on ‘‘Binding and formation energies of native defect pairs in GaAs’’. Physical Review B, 39 (11) 8005 doi:10.1103/physrevb.39.8005
In(1989, April) Physical Review B Vol. 39 (11) American Physical Society (APS)

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Baraff, G. A., Schlüter, M. (1989) Reply to ‘‘Comment on ‘Binding and formation energies of native defect pairs in GaAs’ ’’. Physical Review B, 39 (11) 8006 doi:10.1103/physrevb.39.8006
Baraff, G. A., Schlüter, M. (1986) Binding and formation energies of native defect pairs in GaAs. Physical Review B, 33 (10) 7346-7348 doi:10.1103/physrevb.33.7346
von Bardeleben, H. J., Bourgoin, J. C., Stievenard, D. (1989) Comment on ‘‘Atomic model for theEL2 defect in GaAs’’. Physical Review B, 39 (3) 1966 doi:10.1103/physrevb.39.1966
Wager, J. F., Van Vechten, J. A. (1989) Reply to ‘‘Comment on ‘Atomic model for theEL2 defect in GaAs’’. Physical Review B, 39 (3) 1967-1969 doi:10.1103/physrevb.39.1967
Zundel, T., Weber, J. (1989) Dissociation energies of shallow-acceptor-hydrogen pairs in silicon. Physical Review B, 39 (18) 13549-13552 doi:10.1103/physrevb.39.13549
Chadi, D. J., Chang, K. J. (1989) Energetics ofDX-center formation in GaAs andAlxGa1−xAs alloys. Physical Review B, 39 (14) 10063-10074 doi:10.1103/physrevb.39.10063
Manasreh, M. O., Fischer, D. W. (1989) Electron-irradiation effects on the infrared absorption properties of theEL2 defect in GaAs. Physical Review B, 39 (6) 3871-3874 doi:10.1103/physrevb.39.3871
Williamson, A. J., Zunger, Alex (1998) Effect of interfacial states on the binding energies of electrons and holes in InAs/GaAs quantum dots. Physical Review B, 58 (11) 6724-6727 doi:10.1103/physrevb.58.6724
Gatos, H. C., Lagowski, J. (1987) Comment on ‘‘Identification of a defect in a semiconductor:EL2in GaAs’’. Physical Review B, 36 (14) 7668-7670 doi:10.1103/physrevb.36.7668
von Bardeleben, H. J., Bourgoin, J. C., Stievenard, D. (1987) Reply to ‘‘Comment on ‘Identification of a defect in a semiconductor:EL2 in GaAs’ ’’. Physical Review B, 36 (14) 7671-7672 doi:10.1103/physrevb.36.7671
Halama, G., Tsen, K. T., Lin, S. H., Lüty, F., Page, J. B. (1989) Experimental and theoretical studies of energy transfer inF-center–OH−(OD−) defect pairs in KCl. Physical Review B, 39 (18) 13457-13464 doi:10.1103/physrevb.39.13457
 
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