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Baraff, G. A., Schlüter, M. (1989) Reply to ‘‘Comment on ‘Binding and formation energies of native defect pairs in GaAs’ ’’. Physical Review B, 39 (11) 8006 doi:10.1103/physrevb.39.8006

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Reference TypeJournal (article/letter/editorial)
TitleReply to ‘‘Comment on ‘Binding and formation energies of native defect pairs in GaAs’ ’’
JournalPhysical Review B
AuthorsBaraff, G. A.Author
Schlüter, M.Author
Year1989 (April 15)Volume39
Issue11
PublisherAmerican Physical Society (APS)
DOIdoi:10.1103/physrevb.39.8006Search in ResearchGate
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Mindat Ref. ID14101553Long-form Identifiermindat:1:5:14101553:0
GUID0
Full ReferenceBaraff, G. A., Schlüter, M. (1989) Reply to ‘‘Comment on ‘Binding and formation energies of native defect pairs in GaAs’ ’’. Physical Review B, 39 (11) 8006 doi:10.1103/physrevb.39.8006
Plain TextBaraff, G. A., Schlüter, M. (1989) Reply to ‘‘Comment on ‘Binding and formation energies of native defect pairs in GaAs’ ’’. Physical Review B, 39 (11) 8006 doi:10.1103/physrevb.39.8006
In(1989, April) Physical Review B Vol. 39 (11) American Physical Society (APS)

See Also

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Baraff, G. A., Schlüter, M. (1986) Binding and formation energies of native defect pairs in GaAs. Physical Review B, 33 (10) 7346-7348 doi:10.1103/physrevb.33.7346
Hurle, D. T. J. (1989) Comment on ‘‘Binding and formation energies of native defect pairs in GaAs’’. Physical Review B, 39 (11) 8005 doi:10.1103/physrevb.39.8005
Bachelet, Giovanni B., Schlüter, Michael, Baraff, Gene A. (1983) AsGaantisite defect in GaAs. Physical Review B, 27 (4) 2545-2547 doi:10.1103/physrevb.27.2545
Wager, J. F., Van Vechten, J. A. (1989) Reply to ‘‘Comment on ‘Atomic model for theEL2 defect in GaAs’’. Physical Review B, 39 (3) 1967-1969 doi:10.1103/physrevb.39.1967
Lannoo, M., Baraff, G. A., Schlüter, M., Tománek, D. (1992) Reply to ‘‘Comment on ‘Jahn-Teller effect for the negatively chargedC60molecule: Analogy with the silicon vacancy’ ’’. Physical Review B, 46 (21) 14264-14265 doi:10.1103/physrevb.46.14264
Baraff, G. A., Schlüter, M. (1986) Baraff and Schlüter Respond. Physical Review Letters, 56 (11). 1214 doi:10.1103/physrevlett.56.1214
Lannoo, M., Baraff, G. A., Schlüter, M. (1981) Multiplet splittings and Jahn-Teller energies for the vacancy in silicon. Physical Review B, 24 (2) 955-963 doi:10.1103/physrevb.24.955
Baraff, G. A., Schlüter, M. (1985) Electronic Structure, Total Energies, and Abundances of the Elementary Point Defects in GaAs. Physical Review Letters, 55 (12). 1327-1330 doi:10.1103/physrevlett.55.1327
Beck, Paul A. (1989) Reply to "Comment on `Magnetism inAu82.5Fe17.5' ". Physical Review B, 39 (1) 752 doi:10.1103/physrevb.39.752
Baraff, G. A., Schlüter, M. (1984) Migration of interstitials in silicon. Physical Review B, 30 (6) 3460-3469 doi:10.1103/physrevb.30.3460
Bachelet, Giovanni B., Baraff, G. A., Schlüter, M. (1981) Self-consistent calculations of the electronic structure for ideal Ga and As vacancies in GaAs. Physical Review B, 24 (2) 915-925 doi:10.1103/physrevb.24.915
 
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