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Hamera, M., Walukiewicz, W., Nolte, D. D., Haller, E. E. (1989) Dependence of transition-metal impurity levels on host composition in III-V semiconductors. Physical Review B, 39 (14) 10114-10119 doi:10.1103/physrevb.39.10114

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Reference TypeJournal (article/letter/editorial)
TitleDependence of transition-metal impurity levels on host composition in III-V semiconductors
JournalPhysical Review B
AuthorsHamera, M.Author
Walukiewicz, W.Author
Nolte, D. D.Author
Haller, E. E.Author
Year1989 (May 15)Volume39
Issue14
PublisherAmerican Physical Society (APS)
DOIdoi:10.1103/physrevb.39.10114Search in ResearchGate
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Mindat Ref. ID14101825Long-form Identifiermindat:1:5:14101825:8
GUID0
Full ReferenceHamera, M., Walukiewicz, W., Nolte, D. D., Haller, E. E. (1989) Dependence of transition-metal impurity levels on host composition in III-V semiconductors. Physical Review B, 39 (14) 10114-10119 doi:10.1103/physrevb.39.10114
Plain TextHamera, M., Walukiewicz, W., Nolte, D. D., Haller, E. E. (1989) Dependence of transition-metal impurity levels on host composition in III-V semiconductors. Physical Review B, 39 (14) 10114-10119 doi:10.1103/physrevb.39.10114
In(1989, May) Physical Review B Vol. 39 (14) American Physical Society (APS)

See Also

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Nolte, D. D., Walukiewicz, W., Haller, E. E. (1987) Band-edge hydrostatic deformation potentials in III-V semiconductors. Physical Review Letters, 59 (4). 501-504 doi:10.1103/physrevlett.59.501
Nolte, D. D., Walukiewicz, W., Haller, E. E. (1988) Comment on volume relaxation around defects in silicon upon electron emission. Physical Review B, 38 (9) 6316-6317 doi:10.1103/physrevb.38.6316
Nolte, D. D., Walukiewicz, W., Haller, E. E. (1987) Critical criterion for axial models of defects in as-grownn-type GaAs. Physical Review B, 36 (17) 9374-9377 doi:10.1103/physrevb.36.9374
Nolte, D. D., Walukiewicz, W., Haller, E. E. (1987) Deep-level defects in silicon and the band-edge hydrostatic deformation potentials. Physical Review B, 36 (17) 9392-9394 doi:10.1103/physrevb.36.9392
Itoh, K. M., Walukiewicz, W., Fuchs, H. D., Beeman, J. W., Haller, E. E., Farmer, J. W., Ozhogin, V. I. (1994) Neutral-impurity scattering in isotopically engineered Ge. Physical Review B, 50 (23) 16995-17000 doi:10.1103/physrevb.50.16995
Jenkins, David W., Ren, Shang Yuan, Dow, John D. (1989) Dependence on uniaxial stress of deep levels in III-V compound and group-IV elemental semiconductors. Physical Review B, 39 (11) 7881-7894 doi:10.1103/physrevb.39.7881
Shan, W., Ager, J. W., Walukiewicz, W., Haller, E. E., McCluskey, M. D., Johnson, N. M., Bour, D. P. (1998) Pressure dependence of optical transitions inIn0.15Ga0.85N/GaNmultiple quantum wells. Physical Review B, 58 (16) doi:10.1103/physrevb.58.r10191
McCluskey, M. D., Haller, E. E., Walukiewicz, W., Becla, P. (1996) Hydrogen passivation of Se and Te in AlSb. Physical Review B, 53 (24) 16297-16301 doi:10.1103/physrevb.53.16297
Nolte, D. D., Haller, E. E. (1988) Thermal emission of holes from defects in uniaxially stressedp-type silicon. Physical Review B, 38 (14) 9857-9869 doi:10.1103/physrevb.38.9857
Itoh, K. M., Kinoshita, T., Muto, J., Haegel, N. M., Walukiewicz, W., Dubon, O. D., Beeman, J. W., Haller, E. E. (1997) Carrier scattering by neutral divalent impurities in semiconductors: Theory and experiment. Physical Review B, 56 (4) 1906-1910 doi:10.1103/physrevb.56.1906
Yu, K. M., Walukiewicz, W., Shan, W., Ager, J. W., Wu, J., Haller, E. E., Geisz, J. F., Friedman, D. J., Olson, J. M. (2000) Nitrogen-induced increase of the maximum electron concentration in group III-N-V alloys. Physical Review B, 61 (20) doi:10.1103/physrevb.61.r13337
 
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