Log InRegister
Quick Links : The Mindat ManualThe Rock H. Currier Digital LibraryMindat Newsletter [Free Download]
Home PageAbout MindatThe Mindat ManualHistory of MindatCopyright StatusWho We AreContact UsAdvertise on Mindat
Donate to MindatCorporate SponsorshipSponsor a PageSponsored PagesMindat AdvertisersAdvertise on Mindat
Learning CenterWhat is a mineral?The most common minerals on earthInformation for EducatorsMindat ArticlesThe ElementsThe Rock H. Currier Digital LibraryGeologic Time
Minerals by PropertiesMinerals by ChemistryMineral Visual ExplorerAdvanced Locality SearchRandom MineralRandom LocalitySearch by minIDLocalities Near MeSearch ArticlesSearch GlossaryMore Search Options
Search For:
Mineral Name:
Locality Name:
Keyword(s):
 
The Mindat ManualAdd a New PhotoRate PhotosLocality Edit ReportCoordinate Completion ReportAdd Glossary Item
Mining CompaniesStatisticsUsersMineral MuseumsClubs & OrganizationsMineral Shows & EventsThe Mindat DirectoryDevice SettingsThe Mineral QuizTime Machine
Photo SearchPhoto GalleriesSearch by ColorPhoto Colour ExplorerNew Photos TodayNew Photos YesterdayMembers' Photo GalleriesPast Photo of the Day GalleryPhotography

Nolte, D. D., Walukiewicz, W., Haller, E. E. (1988) Comment on volume relaxation around defects in silicon upon electron emission. Physical Review B, 38 (9) 6316-6317 doi:10.1103/physrevb.38.6316

Advanced
   -   Only viewable:
Reference TypeJournal (article/letter/editorial)
TitleComment on volume relaxation around defects in silicon upon electron emission
JournalPhysical Review B
AuthorsNolte, D. D.Author
Walukiewicz, W.Author
Haller, E. E.Author
Year1988 (September 15)Volume38
Issue9
PublisherAmerican Physical Society (APS)
DOIdoi:10.1103/physrevb.38.6316Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID14101150Long-form Identifiermindat:1:5:14101150:1
GUID0
Full ReferenceNolte, D. D., Walukiewicz, W., Haller, E. E. (1988) Comment on volume relaxation around defects in silicon upon electron emission. Physical Review B, 38 (9) 6316-6317 doi:10.1103/physrevb.38.6316
Plain TextNolte, D. D., Walukiewicz, W., Haller, E. E. (1988) Comment on volume relaxation around defects in silicon upon electron emission. Physical Review B, 38 (9) 6316-6317 doi:10.1103/physrevb.38.6316
In(1988, September) Physical Review B Vol. 38 (9) American Physical Society (APS)

See Also

These are possibly similar items as determined by title/reference text matching only.

Samara, George A., Barnes, C. E. (1988) Reply to ‘‘Comment on volume relaxation around defects in silicon upon electron emission’’. Physical Review B, 38 (9) 6318 doi:10.1103/physrevb.38.6318
Nolte, D. D., Haller, E. E. (1988) Thermal emission of holes from defects in uniaxially stressedp-type silicon. Physical Review B, 38 (14) 9857-9869 doi:10.1103/physrevb.38.9857
Nolte, D. D., Walukiewicz, W., Haller, E. E. (1987) Deep-level defects in silicon and the band-edge hydrostatic deformation potentials. Physical Review B, 36 (17) 9392-9394 doi:10.1103/physrevb.36.9392
Nolte, D. D., Walukiewicz, W., Haller, E. E. (1987) Critical criterion for axial models of defects in as-grownn-type GaAs. Physical Review B, 36 (17) 9374-9377 doi:10.1103/physrevb.36.9374
Hamera, M., Walukiewicz, W., Nolte, D. D., Haller, E. E. (1989) Dependence of transition-metal impurity levels on host composition in III-V semiconductors. Physical Review B, 39 (14) 10114-10119 doi:10.1103/physrevb.39.10114
Nolte, D. D., Walukiewicz, W., Haller, E. E. (1987) Band-edge hydrostatic deformation potentials in III-V semiconductors. Physical Review Letters, 59 (4). 501-504 doi:10.1103/physrevlett.59.501
McCluskey, M. D., Haller, E. E., Walukiewicz, W., Becla, P. (1996) Hydrogen passivation of Se and Te in AlSb. Physical Review B, 53 (24) 16297-16301 doi:10.1103/physrevb.53.16297
Wu, J., Yu, K. M., Walukiewicz, W., He, G., Haller, E. E., Mars, D. E., Chamberlin, D. R. (2003) Mutual passivation effects in Si-doped dilutedInyGa1−yAs1−xNxalloys. Physical Review B, 68 (19) doi:10.1103/physrevb.68.195202
Bornemann, H. J., Walukiewicz, W., Bliss, D. E. (1992) Antiferromagnetic ordering of defects in GaAs. Physical Review B, 46 (15) 9849-9852 doi:10.1103/physrevb.46.9849
Shan, W., Ager, J. W., Walukiewicz, W., Haller, E. E., McCluskey, M. D., Johnson, N. M., Bour, D. P. (1998) Pressure dependence of optical transitions inIn0.15Ga0.85N/GaNmultiple quantum wells. Physical Review B, 58 (16) doi:10.1103/physrevb.58.r10191
Itoh, K. M., Walukiewicz, W., Fuchs, H. D., Beeman, J. W., Haller, E. E., Farmer, J. W., Ozhogin, V. I. (1994) Neutral-impurity scattering in isotopically engineered Ge. Physical Review B, 50 (23) 16995-17000 doi:10.1103/physrevb.50.16995
 
and/or  
Mindat.org® is an outreach project of the Hudson Institute of Mineralogy, a 501(c)(3) not-for-profit organization. Mindat® and mindat.org® are registered trademarks of the Hudson Institute of Mineralogy.
Copyright © mindat.org and the Hudson Institute of Mineralogy 1993-2026, except where stated. Most political location boundaries are © OpenStreetMap contributors. Mindat.org relies on the contributions of thousands of members and supporters. Founded in 2000 by Jolyon Ralph and Ida Chau.
To cite: Ralph, J., Von Bargen, D., Martynov, P., Zhang, J., Que, X., Prabhu, A., Morrison, S. M., Li, W., Chen, W., & Ma, X. (2025). Mindat.org: The open access mineralogy database to accelerate data-intensive geoscience research. American Mineralogist, 110(6), 833–844. doi:10.2138/am-2024-9486.
Privacy Policy - Terms & Conditions - Contact Us / DMCA issues - Report a bug/vulnerability Current server date and time: June 7, 2026 06:22:12
Go to top of page