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Samara, George A., Barnes, C. E. (1988) Reply to ‘‘Comment on volume relaxation around defects in silicon upon electron emission’’. Physical Review B, 38 (9) 6318 doi:10.1103/physrevb.38.6318

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Reference TypeJournal (article/letter/editorial)
TitleReply to ‘‘Comment on volume relaxation around defects in silicon upon electron emission’’
JournalPhysical Review B
AuthorsSamara, George A.Author
Barnes, C. E.Author
Year1988 (September 15)Volume38
Issue9
PublisherAmerican Physical Society (APS)
DOIdoi:10.1103/physrevb.38.6318Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID14101151Long-form Identifiermindat:1:5:14101151:8
GUID0
Full ReferenceSamara, George A., Barnes, C. E. (1988) Reply to ‘‘Comment on volume relaxation around defects in silicon upon electron emission’’. Physical Review B, 38 (9) 6318 doi:10.1103/physrevb.38.6318
Plain TextSamara, George A., Barnes, C. E. (1988) Reply to ‘‘Comment on volume relaxation around defects in silicon upon electron emission’’. Physical Review B, 38 (9) 6318 doi:10.1103/physrevb.38.6318
In(1988, September) Physical Review B Vol. 38 (9) American Physical Society (APS)

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Nolte, D. D., Walukiewicz, W., Haller, E. E. (1988) Comment on volume relaxation around defects in silicon upon electron emission. Physical Review B, 38 (9) 6316-6317 doi:10.1103/physrevb.38.6316
Prokes, S. M., Glembocki, O. J. (1995) Reply to ‘‘Comment on ‘Role of interfacial oxide-related defects in the red-light emission in porous silicon’ ’’. Physical Review B, 51 (16) 11183-11186 doi:10.1103/physrevb.51.11183
Krieger, J. B., Iafrate, G. J. (1988) Reply to ‘‘Comment on ‘Time evolution of Bloch electrons in a homogeneous electric field’ ’’. Physical Review B, 38 (9) 6324-6325 doi:10.1103/physrevb.38.6324
Nolte, D. D., Haller, E. E. (1988) Thermal emission of holes from defects in uniaxially stressedp-type silicon. Physical Review B, 38 (14) 9857-9869 doi:10.1103/physrevb.38.9857
Peverley, J. Roger (1972) Reply to "Comment on Acoustic Measurements of Electron Relaxation Times". Physical Review B, 6 (8) 3155-3156 doi:10.1103/physrevb.6.3155
Samara, G. A. (1988) Breathing-mode lattice relaxation associated with the vacancy and phosphorus-vacancy-pair (E-center) defect in silicon. Physical Review B, 37 (14) 8523-8526 doi:10.1103/physrevb.37.8523
Samara, G. A. (1989) Breathing-mode lattice relaxation accompanying emission and capture by deep electronic levels in silicon. Physical Review B, 39 (15) 11001-11010 doi:10.1103/physrevb.39.11001
Wager, J. F., Van Vechten, J. A. (1988) Reply to ‘‘Comment on ‘Atomic model for theEL2 defect in GaAs’’. Physical Review B, 38 (15) 10956-10957 doi:10.1103/physrevb.38.10956
Samara, G. A., Barnes, C. E. (1986) Lattice Relaxation Accompanying Carrier Capture and Emission by Deep Electronic Levels in Semiconductors. Physical Review Letters, 57 (16). 2069-2072 doi:10.1103/physrevlett.57.2069
Lubensky, T. C., Tremblay, A.-M. S. (1988) Reply to ‘‘Comment on the conductivity exponent in continuum percolation’’. Physical Review B, 37 (13) 7894-7895 doi:10.1103/physrevb.37.7894
Tennakone, K. (1988) Reply to ‘‘Comment on ‘Solvated polaron in an ionic lattice’ ’’. Physical Review B, 37 (3) 1411 doi:10.1103/physrevb.37.1411
 
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