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Samara, G. A. (1989) Breathing-mode lattice relaxation accompanying emission and capture by deep electronic levels in silicon. Physical Review B, 39 (15) 11001-11010 doi:10.1103/physrevb.39.11001

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Reference TypeJournal (article/letter/editorial)
TitleBreathing-mode lattice relaxation accompanying emission and capture by deep electronic levels in silicon
JournalPhysical Review B
AuthorsSamara, G. A.Author
Year1989 (May 15)Volume39
Issue15
PublisherAmerican Physical Society (APS)
DOIdoi:10.1103/physrevb.39.11001Search in ResearchGate
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Mindat Ref. ID14101980Long-form Identifiermindat:1:5:14101980:4
GUID0
Full ReferenceSamara, G. A. (1989) Breathing-mode lattice relaxation accompanying emission and capture by deep electronic levels in silicon. Physical Review B, 39 (15) 11001-11010 doi:10.1103/physrevb.39.11001
Plain TextSamara, G. A. (1989) Breathing-mode lattice relaxation accompanying emission and capture by deep electronic levels in silicon. Physical Review B, 39 (15) 11001-11010 doi:10.1103/physrevb.39.11001
In(1989, May) Physical Review B Vol. 39 (15) American Physical Society (APS)

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Samara, G. A., Barnes, C. E. (1986) Lattice Relaxation Accompanying Carrier Capture and Emission by Deep Electronic Levels in Semiconductors. Physical Review Letters, 57 (16). 2069-2072 doi:10.1103/physrevlett.57.2069
Samara, G. A. (1988) Breathing-mode lattice relaxation associated with the vacancy and phosphorus-vacancy-pair (E-center) defect in silicon. Physical Review B, 37 (14) 8523-8526 doi:10.1103/physrevb.37.8523
Samara, G. A. (1989) Pressure dependence of deep electronic levels in semiconductors: Phosphorus-vacancy pair (or SiEcenter) and divacancy in silicon. Physical Review B, 39 (17) 12764-12774 doi:10.1103/physrevb.39.12764
Samara, G. A., Vook, D. W., Gibbons, J. F. (1992) Breathing-mode relaxation associated with electron emission and capture processes ofEL2 in GaAs. Physical Review Letters, 68 (10). 1582-1585 doi:10.1103/physrevlett.68.1582
Samara, G. A. (1987) Pressure dependence of deep electronic levels in semiconductors: The oxygen-vacancy pair (orAcenter) in silicon. Physical Review B, 36 (9) 4841-4848 doi:10.1103/physrevb.36.4841
Samara, G. A., Barnes, C. E. (2006) Pressure dependence of the configurational bistability and deep electronic levels of the MFe center in InP. Physical Review B, 73 (15) doi:10.1103/physrevb.73.155206
Lindefelt, U., Zunger, Alex (1984) Breathing-mode relaxation around tetrahedral interstitial3dimpurities in silicon. Physical Review B, 30 (2) 1102-1105 doi:10.1103/physrevb.30.1102
Samara, G. A., Barnes, C. E. (1987) Pressure dependence of impurity levels in semiconductors: The deep gold acceptor level and shallow donor and acceptor levels in silicon. Physical Review B, 35 (14) 7575-7584 doi:10.1103/physrevb.35.7575
Samara, George A., Barnes, C. E. (1988) Reply to ‘‘Comment on volume relaxation around defects in silicon upon electron emission’’. Physical Review B, 38 (9) 6318 doi:10.1103/physrevb.38.6318
Bechstedt, Friedhelm, Harrison, Walter A. (1989) Lattice relaxation around substitutional defects in semiconductors. Physical Review B, 39 (8) 5041-5050 doi:10.1103/physrevb.39.5041
Ren, Shang Yuan, Dow, John D. (1989) Electronic structure and deep impurity levels in structure-modulated zinc-blende–wurtzite semiconductor superlattices. Physical Review B, 39 (11) 7796-7802 doi:10.1103/physrevb.39.7796
 
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