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Jordan, A.S., Monberg, E.M., Clemans, J.E. (1993) Thermal stress theory of dislocation reduction in the vertical gradient freeze (VGF) growth of GaAs and InP. Journal of Crystal Growth, 128 (1). 444-450 doi:10.1016/0022-0248(93)90364-3

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Reference TypeJournal (article/letter/editorial)
TitleThermal stress theory of dislocation reduction in the vertical gradient freeze (VGF) growth of GaAs and InP
JournalJournal of Crystal Growth
AuthorsJordan, A.S.Author
Monberg, E.M.Author
Clemans, J.E.Author
Year1993 (March)Volume128
Issue1
PublisherElsevier BV
DOIdoi:10.1016/0022-0248(93)90364-3Search in ResearchGate
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Mindat Ref. ID2811754Long-form Identifiermindat:1:5:2811754:8
GUID0
Full ReferenceJordan, A.S., Monberg, E.M., Clemans, J.E. (1993) Thermal stress theory of dislocation reduction in the vertical gradient freeze (VGF) growth of GaAs and InP. Journal of Crystal Growth, 128 (1). 444-450 doi:10.1016/0022-0248(93)90364-3
Plain TextJordan, A.S., Monberg, E.M., Clemans, J.E. (1993) Thermal stress theory of dislocation reduction in the vertical gradient freeze (VGF) growth of GaAs and InP. Journal of Crystal Growth, 128 (1). 444-450 doi:10.1016/0022-0248(93)90364-3
In(1993, March) Journal of Crystal Growth Vol. 128 (1) Elsevier BV

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Gault, W.A., Monberg, E.M., Clemans, J.E. (1986) A novel application of the vertical gradient freeze method to the growth of high quality IIIā€“V crystals. Journal of Crystal Growth, 74 (3). 491-506 doi:10.1016/0022-0248(86)90194-6
Monberg, E.M., Brown, H., Bonner, C.E. (1989) The dynamic gradient freeze growth of InP. Journal of Crystal Growth, 94 (1). 109-114 doi:10.1016/0022-0248(89)90609-x
Jordan, A. S., Monberg, E. M. (1993) Quasi-steady-state heat transfer/thermal stress model for dislocation generation in the vertical gradient freeze growth of GaAs. Journal of Applied Physics, 73 (8). 4016-4022 doi:10.1063/1.352868
Jordan, A.S., von Neida, A.R., Caruso, R. (1984) The theory and practice of dislocation reduction in GaAs and InP. Journal of Crystal Growth, 70 (1). 555-573 doi:10.1016/0022-0248(84)90318-x
Amon, J., Zemke, D., Hoffmann, B., MĆ¼ller, G. (1996) Growth of 2ā€³ InP and GaAs crystals by the vertical gradient freeze (VGF) technique and characterization. Journal of Crystal Growth, 166 (1). 646-650 doi:10.1016/0022-0248(96)00039-5
Jordan, A. S., Monberg, E. M., Clemans, J. E. (1993) A comparison of reducing the dislocation densities in GaAs grown by the vertical gradient freeze and liquidā€encapsulated Czochralski techniques. Journal of Applied Physics, 73 (1). 477-479 doi:10.1063/1.353825
Monberg, E.M., Gault, W.A., Simchock, F., Dominguez, F. (1987) Vertical gradient freeze growth of large diameter, low defect density indium phosphide. Journal of Crystal Growth, 83 (2). 174-183 doi:10.1016/0022-0248(87)90004-2
Abernathy, C.R., Kinsella, A.P., Jordan, A.S., Caruso, R., Pearton, S.J., Temkin, H., Wade, H. (1987) Growth and characterization of low defect GaAs by vertical gradient freeze. Journal of Crystal Growth, 85 (1). 106-115 doi:10.1016/0022-0248(87)90210-7
Jordan, A.S. (1985) Estimated thermal diffusivity, Prandtl number and Grashof number of molten GaAs, InP, and GaSb. Journal of Crystal Growth, 71 (3). 551-558 doi:10.1016/0022-0248(85)90361-6
Jordan, A.S. (1985) Some thermal and mechanical properties of InP essential to crystal growth modeling. Journal of Crystal Growth, 71 (3). 559-565 doi:10.1016/0022-0248(85)90362-8
Hofmann, Dieter, Jung, Thomas, MĆ¼ller, Georg (1993) Growth of 2 inch Ge: Ga crystals by the dynamical vertical gradient freeze process and its numerical modelling including transient segregation. Journal of Crystal Growth, 128 (1). 213-218 doi:10.1016/0022-0248(93)90321-m
 
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