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Amon, J., Zemke, D., Hoffmann, B., Müller, G. (1996) Growth of 2″ InP and GaAs crystals by the vertical gradient freeze (VGF) technique and characterization. Journal of Crystal Growth, 166 (1). 646-650 doi:10.1016/0022-0248(96)00039-5

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Reference TypeJournal (article/letter/editorial)
TitleGrowth of 2″ InP and GaAs crystals by the vertical gradient freeze (VGF) technique and characterization
JournalJournal of Crystal Growth
AuthorsAmon, J.Author
Zemke, D.Author
Hoffmann, B.Author
Müller, G.Author
Year1996 (September)Volume166
Issue1
PublisherElsevier BV
DOIdoi:10.1016/0022-0248(96)00039-5Search in ResearchGate
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Mindat Ref. ID2829152Long-form Identifiermindat:1:5:2829152:1
GUID0
Full ReferenceAmon, J., Zemke, D., Hoffmann, B., Müller, G. (1996) Growth of 2″ InP and GaAs crystals by the vertical gradient freeze (VGF) technique and characterization. Journal of Crystal Growth, 166 (1). 646-650 doi:10.1016/0022-0248(96)00039-5
Plain TextAmon, J., Zemke, D., Hoffmann, B., Müller, G. (1996) Growth of 2″ InP and GaAs crystals by the vertical gradient freeze (VGF) technique and characterization. Journal of Crystal Growth, 166 (1). 646-650 doi:10.1016/0022-0248(96)00039-5
In(1996, September) Journal of Crystal Growth Vol. 166 (1) Elsevier BV

See Also

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Weimann, H., Amon, J., Jung, Th., Müller, G. (1997) Numerical simulation of the growth of 2″ diameter GaAs crystals by the vertical gradient freeze technique. Journal of Crystal Growth, 180 (3). 560-565 doi:10.1016/s0022-0248(97)00254-6
Amon, J, Berwian, P, Müller, G (1999) Computer-assisted growth of low-EPD GaAs with 3″ diameter by the vertical gradient-freeze technique. Journal of Crystal Growth, 198. 361-366 doi:10.1016/s0022-0248(98)01220-2
Birkmann, B, Rasp, M, Stenzenberger, J, Müller, G (2000) Growth of 3″ and 4″ gallium arsenide crystals by the vertical gradient freeze (VGF) method. Journal of Crystal Growth, 211 (1). 157-162 doi:10.1016/s0022-0248(99)00832-5
Amon, J, Dumke, F, Müller, G (1998) Influence of the crucible shape on the formation of facets and twins in the growth of GaAs by the vertical gradient freeze technique. Journal of Crystal Growth, 187 (1). 1-8 doi:10.1016/s0022-0248(97)00849-x
Jordan, A.S., Monberg, E.M., Clemans, J.E. (1993) Thermal stress theory of dislocation reduction in the vertical gradient freeze (VGF) growth of GaAs and InP. Journal of Crystal Growth, 128 (1). 444-450 doi:10.1016/0022-0248(93)90364-3
Garandet, J.P., Duffar, T., Favier, J.J. (1989) Vertical gradient freeze growth and characterization of high quality GaSb single crystals. Journal of Crystal Growth, 96 (4). 888-898 doi:10.1016/0022-0248(89)90649-0
Müller, G., Birkmann, B. (2002) Optimization of VGF-growth of GaAs crystals by the aid of numerical modelling. Journal of Crystal Growth, 237. 1745-1751 doi:10.1016/s0022-0248(01)02324-7
Hofmann, Dieter, Jung, Thomas, Müller, Georg (1993) Growth of 2 inch Ge: Ga crystals by the dynamical vertical gradient freeze process and its numerical modelling including transient segregation. Journal of Crystal Growth, 128 (1). 213-218 doi:10.1016/0022-0248(93)90321-m
Bourret, E.D., Merk, E.C. (1991) Effects of total liquid encapsulation on the characteristics of GaAs single crystals grown by the vertical gradient freeze technique. Journal of Crystal Growth, 110 (3). 395-404 doi:10.1016/0022-0248(91)90275-a
Lan, C.W., Song, C.R. (1997) Growth of benzil crystals by vertical dynamic gradient freeze technique in a transparent furnace. Journal of Crystal Growth, 180 (1). 127-135 doi:10.1016/s0022-0248(97)00204-2
Rasp, M, Birkmann, B, Müller, G (2001) Anomalous interface shapes in the seed well during vertical gradient freeze growth of Si-doped GaAs. Journal of Crystal Growth, 222 (1). 88-95 doi:10.1016/s0022-0248(00)00924-6
 
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