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Alexeev, A.N., Karpov, S.Yu., Pogorelsky, Yu.V., Sokolov, I.A. (1996) RHEED study of c(4 × 4) → (2 × 4) transition on GaAs(001) surface. Journal of Crystal Growth, 166 (1). 72-77 doi:10.1016/0022-0248(96)00038-3

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Reference TypeJournal (article/letter/editorial)
TitleRHEED study of c(4 × 4) → (2 × 4) transition on GaAs(001) surface
JournalJournal of Crystal Growth
AuthorsAlexeev, A.N.Author
Karpov, S.Yu.Author
Pogorelsky, Yu.V.Author
Sokolov, I.A.Author
Year1996 (September)Volume166
Issue1
PublisherElsevier BV
DOIdoi:10.1016/0022-0248(96)00038-3Search in ResearchGate
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Mindat Ref. ID2829147Long-form Identifiermindat:1:5:2829147:9
GUID0
Full ReferenceAlexeev, A.N., Karpov, S.Yu., Pogorelsky, Yu.V., Sokolov, I.A. (1996) RHEED study of c(4 × 4) → (2 × 4) transition on GaAs(001) surface. Journal of Crystal Growth, 166 (1). 72-77 doi:10.1016/0022-0248(96)00038-3
Plain TextAlexeev, A.N., Karpov, S.Yu., Pogorelsky, Yu.V., Sokolov, I.A. (1996) RHEED study of c(4 × 4) → (2 × 4) transition on GaAs(001) surface. Journal of Crystal Growth, 166 (1). 72-77 doi:10.1016/0022-0248(96)00038-3
In(1996, September) Journal of Crystal Growth Vol. 166 (1) Elsevier BV

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Alexeev, A.N., Karpov, S.Yu., Maiorov, M.A., Myachin, V.E., Pogorelsky, Yu.V., Sokolov, I.A. (1996) Thermal etching of binary and ternary III–V compounds under vacuum conditions. Journal of Crystal Growth, 166 (1). 167-171 doi:10.1016/0022-0248(96)00040-1
Karpov, S.Yu., Myachin, V.E., Pogorelsky, Yu.V. (1995) Time-resolved reflection high energy electron diffraction study of dynamical surface processes during molecular beam epitaxy of GaAs and AlAs. Journal of Crystal Growth, 146 (1). 344-348 doi:10.1016/0022-0248(94)00556-7
Chaly, V.P, Borisov, B.A, Demidov, D.M, Krasovitsky, D.M, Pogorelsky, Yu.V, Shkurko, A.P, Sokolov, I.A, Karpov, S.Yu (1999) Indium droplet formation during molecular beam epitaxy of InGaN. Journal of Crystal Growth, 206 (1). 147-149 doi:10.1016/s0022-0248(99)00298-5
Karpov, S.Yu., Kovalchuk, Yu.V., Myachin, V.E., Pogorelsky, Yu.V. (1994) Nucleation and growth kinetics of GaAs during molecular beam epitaxy. Surface Science, 314 (1). 79-88 doi:10.1016/0039-6028(94)90214-3
Alexeev, A.N., Karpov, S.Yu. (1996) Conditions of excess liquid phase formation during molecular beam epitaxy of III–V ternary compounds. Journal of Crystal Growth, 162 (1). 15-24 doi:10.1016/0022-0248(95)00922-1
Rolley, E., Guthmann, C., Balibar, S. (1996) Vicinal surfaces of helium 4 crystals. Journal of Crystal Growth, 166 (1). 55-60 doi:10.1016/0022-0248(96)00122-4
Chaly, V.P., Demidov, D.M., Fokin, G.A., Karpov, S.Yu., Myachin, V.E., Pogorelsky, Yu.V., Rusanovich, I.Yu., Shkurko, A.P., Ter-Martirosyan, A.L. (1995) Use of molecular beam epitaxy for high-power AlGaAs laser production. Journal of Crystal Growth, 150. 1350-1353 doi:10.1016/0022-0248(95)80158-9
Karpov, S.Yu., Kovalchuk, Yu.V., Myachin, V.E., Pogorelskii, Yu.V. (1993) Instability of III–V compound surfaces due to liquid phase formation. Journal of Crystal Growth, 129 (3). 563-570 doi:10.1016/0022-0248(93)90492-f
Behrend, J., Wassermeier, M., Ploog, K.H. (1996) Virtual-surfactant mediated epitaxy of InAs on GaAs(001) studied by scanning tunneling microscopy. Journal of Crystal Growth, 167 (3). 440-445 doi:10.1016/0022-0248(96)00273-4
Burianek, M., Liebertz, J., Mühlberg, M. (1996) Crystal growth and characterization of LiPbPO4. Journal of Crystal Growth, 166 (1). 361-363 doi:10.1016/0022-0248(96)00047-4
Zhang, S.B., Zunger, Alex (1996) Predicted structures and stabilities of the surface A grooves and double bilayer height steps on the GaAs(001)-2 × 4 surface. Journal of Crystal Growth, 163 (1). 113-121 doi:10.1016/0022-0248(95)01053-x
 
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