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Alexeev, A.N., Karpov, S.Yu., Maiorov, M.A., Myachin, V.E., Pogorelsky, Yu.V., Sokolov, I.A. (1996) Thermal etching of binary and ternary III–V compounds under vacuum conditions. Journal of Crystal Growth, 166 (1). 167-171 doi:10.1016/0022-0248(96)00040-1

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Reference TypeJournal (article/letter/editorial)
TitleThermal etching of binary and ternary III–V compounds under vacuum conditions
JournalJournal of Crystal Growth
AuthorsAlexeev, A.N.Author
Karpov, S.Yu.Author
Maiorov, M.A.Author
Myachin, V.E.Author
Pogorelsky, Yu.V.Author
Sokolov, I.A.Author
Year1996 (September)Volume166
Issue1
PublisherElsevier BV
DOIdoi:10.1016/0022-0248(96)00040-1Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID2829157Long-form Identifiermindat:1:5:2829157:6
GUID0
Full ReferenceAlexeev, A.N., Karpov, S.Yu., Maiorov, M.A., Myachin, V.E., Pogorelsky, Yu.V., Sokolov, I.A. (1996) Thermal etching of binary and ternary III–V compounds under vacuum conditions. Journal of Crystal Growth, 166 (1). 167-171 doi:10.1016/0022-0248(96)00040-1
Plain TextAlexeev, A.N., Karpov, S.Yu., Maiorov, M.A., Myachin, V.E., Pogorelsky, Yu.V., Sokolov, I.A. (1996) Thermal etching of binary and ternary III–V compounds under vacuum conditions. Journal of Crystal Growth, 166 (1). 167-171 doi:10.1016/0022-0248(96)00040-1
In(1996, September) Journal of Crystal Growth Vol. 166 (1) Elsevier BV

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Alexeev, A.N., Karpov, S.Yu., Pogorelsky, Yu.V., Sokolov, I.A. (1996) RHEED study of c(4 × 4) → (2 × 4) transition on GaAs(001) surface. Journal of Crystal Growth, 166 (1). 72-77 doi:10.1016/0022-0248(96)00038-3
Alexeev, A.N., Karpov, S.Yu. (1996) Conditions of excess liquid phase formation during molecular beam epitaxy of III–V ternary compounds. Journal of Crystal Growth, 162 (1). 15-24 doi:10.1016/0022-0248(95)00922-1
Karpov, S.Yu., Kovalchuk, Yu.V., Myachin, V.E., Pogorelskii, Yu.V. (1993) Instability of III–V compound surfaces due to liquid phase formation. Journal of Crystal Growth, 129 (3). 563-570 doi:10.1016/0022-0248(93)90492-f
Karpov, S.Yu., Myachin, V.E., Pogorelsky, Yu.V. (1995) Time-resolved reflection high energy electron diffraction study of dynamical surface processes during molecular beam epitaxy of GaAs and AlAs. Journal of Crystal Growth, 146 (1). 344-348 doi:10.1016/0022-0248(94)00556-7
Karpov, S.Yu., Kovalchuk, Yu.V., Myachin, V.E., Pogorelsky, Yu.V. (1994) Nucleation and growth kinetics of GaAs during molecular beam epitaxy. Surface Science, 314 (1). 79-88 doi:10.1016/0039-6028(94)90214-3
Chaly, V.P., Demidov, D.M., Fokin, G.A., Karpov, S.Yu., Myachin, V.E., Pogorelsky, Yu.V., Rusanovich, I.Yu., Shkurko, A.P., Ter-Martirosyan, A.L. (1995) Use of molecular beam epitaxy for high-power AlGaAs laser production. Journal of Crystal Growth, 150. 1350-1353 doi:10.1016/0022-0248(95)80158-9
Chaly, V.P, Borisov, B.A, Demidov, D.M, Krasovitsky, D.M, Pogorelsky, Yu.V, Shkurko, A.P, Sokolov, I.A, Karpov, S.Yu (1999) Indium droplet formation during molecular beam epitaxy of InGaN. Journal of Crystal Growth, 206 (1). 147-149 doi:10.1016/s0022-0248(99)00298-5
Karpov, S.Yu., Makarov, Yu.N., Ramm, M.S. (1996) Analytical model of silicon carbide growth under free-molecular transport conditions. Journal of Crystal Growth, 169 (3). 491-495 doi:10.1016/s0022-0248(96)00416-2
Karpov, S.Yu., Maiorov, M.A. (1995) Analysis of V-group molecules sticking to III–V compound surfaces. Surface Science, 344 (1). 11-22 doi:10.1016/0039-6028(95)00831-4
Brück, E., Gelders, H.J., Harrison, B.J., Menovsky, A.A. (1996) Laser-heated fibre pedestal growth under UHV conditions. Journal of Crystal Growth, 166 (1). 394-397 doi:10.1016/0022-0248(96)00050-4
Woensdregt, Cornelis F. (1996) Chairman's preface. Journal of Crystal Growth, 166 (1). doi:10.1016/0022-0248(96)80043-1
 
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