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Cröll, A., Schweizer, M., Tegetmeier, A., Benz, K.W. (1996) Floating-zone growth of GaAs. Journal of Crystal Growth, 166 (1). 239-244 doi:10.1016/0022-0248(96)00059-0

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Reference TypeJournal (article/letter/editorial)
TitleFloating-zone growth of GaAs
JournalJournal of Crystal Growth
AuthorsCröll, A.Author
Schweizer, M.Author
Tegetmeier, A.Author
Benz, K.W.Author
Year1996 (September)Volume166
Issue1
PublisherElsevier BV
DOIdoi:10.1016/0022-0248(96)00059-0Search in ResearchGate
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Mindat Ref. ID2829253Long-form Identifiermindat:1:5:2829253:9
GUID0
Full ReferenceCröll, A., Schweizer, M., Tegetmeier, A., Benz, K.W. (1996) Floating-zone growth of GaAs. Journal of Crystal Growth, 166 (1). 239-244 doi:10.1016/0022-0248(96)00059-0
Plain TextCröll, A., Schweizer, M., Tegetmeier, A., Benz, K.W. (1996) Floating-zone growth of GaAs. Journal of Crystal Growth, 166 (1). 239-244 doi:10.1016/0022-0248(96)00059-0
In(1996, September) Journal of Crystal Growth Vol. 166 (1) Elsevier BV

See Also

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Tegetmeier, A., Cröll, A., Danilewsky, A., Benz, K.W. (1996) GaSb: surface tension and floating-zone growth. Journal of Crystal Growth, 166 (1). 651-656 doi:10.1016/0022-0248(96)00134-0
Cröll, A, Kaiser, Th, Schweizer, M, Danilewsky, A.N, Lauer, S, Tegetmeier, A, Benz, K.W (1998) Floating-zone and floating-solution-zone growth of GaSb under microgravity. Journal of Crystal Growth, 191 (3). 365-376 doi:10.1016/s0022-0248(98)00215-2
Kloess, G., Cröll, A., Benz, K.W. (1996) Contactless measurement of dopant distribution using etch roughnesses. Journal of Crystal Growth, 166 (1). 319-324 doi:10.1016/0022-0248(96)00093-0
Dold, P., Schweizer, M., Cröll, A., Benz, K.W. (2002) Measurement of microscopic growth rates in float zone silicon crystals. Journal of Crystal Growth, 237. 1671-1677 doi:10.1016/s0022-0248(01)02318-1
Campbell, T.A, Schweizer, M, Dold, P, Cröll, A, Benz, K.W (2001) Float zone growth and characterization of Ge1−xSix (x⩽10at%) single crystals. Journal of Crystal Growth, 226 (2). 231-239 doi:10.1016/s0022-0248(01)01394-x
Schweizer, M, Cröll, A, Dold, P, Kaiser, Th, Lichtensteiger, M, Benz, K.W (1999) Measurement of temperature fluctuations and microscopic growth rates in a silicon floating zone under microgravity. Journal of Crystal Growth, 203 (4). 500-510 doi:10.1016/s0022-0248(99)00155-4
Dold, P., Cröll, A., Lichtensteiger, M., Kaiser, Th., Benz, K.W. (2001) Floating zone growth of silicon in magnetic fields:. Journal of Crystal Growth, 231 (1). 95-106 doi:10.1016/s0022-0248(01)01491-9
Cröll, A., Dold, P., Benz, K.W. (1994) Segregation in Si floating-zone crystals grown under microgravity and in a magnetic field. Journal of Crystal Growth, 137 (1). 95-101 doi:10.1016/0022-0248(94)91254-8
Tegetmeier, A., Cröll, A., Benz, K.W. (1994) A formula describing the temperature dependence of surface tension for some semiconductors melts. Journal of Crystal Growth, 141 (3). 451-454 doi:10.1016/0022-0248(94)90251-8
Dold, P., Cröll, A., Benz, K.W. (1998) Floating-zone growth of silicon in magnetic fields. I. Weak static axial fields. Journal of Crystal Growth, 183 (4). 545-553 doi:10.1016/s0022-0248(97)00485-5
Cröll, A., Szofran, F.R., Dold, P., Benz, K.W., Lehoczky, S.L. (1998) Floating-zone growth of silicon in magnetic fields. II. Strong static axial fields. Journal of Crystal Growth, 183 (4). 554-563 doi:10.1016/s0022-0248(97)00486-7
 
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