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Dornberger, E., von Ammon, W., Van den Bogaert, N., Dupret, F. (1996) Transient computer simulation of a CZ crystal growth process. Journal of Crystal Growth, 166 (1). 452-457 doi:10.1016/0022-0248(96)00068-1

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Reference TypeJournal (article/letter/editorial)
TitleTransient computer simulation of a CZ crystal growth process
JournalJournal of Crystal Growth
AuthorsDornberger, E.Author
von Ammon, W.Author
Van den Bogaert, N.Author
Dupret, F.Author
Year1996 (September)Volume166
Issue1
PublisherElsevier BV
DOIdoi:10.1016/0022-0248(96)00068-1Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID2829296Long-form Identifiermindat:1:5:2829296:4
GUID0
Full ReferenceDornberger, E., von Ammon, W., Van den Bogaert, N., Dupret, F. (1996) Transient computer simulation of a CZ crystal growth process. Journal of Crystal Growth, 166 (1). 452-457 doi:10.1016/0022-0248(96)00068-1
Plain TextDornberger, E., von Ammon, W., Van den Bogaert, N., Dupret, F. (1996) Transient computer simulation of a CZ crystal growth process. Journal of Crystal Growth, 166 (1). 452-457 doi:10.1016/0022-0248(96)00068-1
In(1996, September) Journal of Crystal Growth Vol. 166 (1) Elsevier BV

See Also

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Van den Bogaert, N., Dupret, F. (1996) Simulation of back-melting in Czochralski growth. Journal of Crystal Growth, 166 (1). 446-451 doi:10.1016/0022-0248(96)00135-2
Van den Bogaert, N., Dupret, F. (1997) Dynamic global simulation of the Czochralski process II. Analysis of the growth of a germanium crystal. Journal of Crystal Growth, 171 (1). 77-93 doi:10.1016/s0022-0248(96)00489-7
Van den Bogaert, N., Dupret, F. (1997) Dynamic global simulation of the Czochralski process I. Principles of the method. Journal of Crystal Growth, 171 (1). 65-76 doi:10.1016/s0022-0248(96)00488-5
Huitema, E., van der Eerden, J.P. (1996) Defect formation during crystal growth. Journal of Crystal Growth, 166 (1). 141-145 doi:10.1016/0022-0248(96)00086-3
Woensdregt, Cornelis F. (1996) Chairman's preface. Journal of Crystal Growth, 166 (1). doi:10.1016/0022-0248(96)80043-1
Assaker, R., van den Bogaert, N., Dupret, F. (1997) Time-dependent simulation of the growth of large silicon crystals by the Czochralski technique using a turbulent model for melt convection. Journal of Crystal Growth, 180 (3). 450-460 doi:10.1016/s0022-0248(97)00240-6
Dornberger, E., von Ammon, W., Virbulis, J., Hanna, B., Sinno, T. (2001) Modeling of transient point defect dynamics in Czochralski silicon crystals. Journal of Crystal Growth, 230 (1). 291-299 doi:10.1016/s0022-0248(01)01319-7
Wolf, Th. (1996) Crystal growth mechanisms and growth anisotropy of YBa2Cu3Ox crystals. Journal of Crystal Growth, 166 (1). 810-815 doi:10.1016/0022-0248(96)00143-1
Ivanov, N.G., Korsakov, A.B., Smirnov, E.M., Khodosevitch, K.V., Kalaev, V.V., Makarov, Yu.N., Dornberger, E., Virbulis, J., von Ammon, W. (2003) Analysis of magnetic field effect on 3D melt flow in CZ Si growth. Journal of Crystal Growth, 250 (1). 183-188 doi:10.1016/s0022-0248(02)02263-7
Olivari, E., Jacmin, P., van den Bogaert, N., Wertz, V., Dupret, F. (1997) The use of a reduced model for on-line simulations of the Czochralski growth of single crystals. Journal of Crystal Growth, 180 (3). 627-637 doi:10.1016/s0022-0248(97)00258-3
StÇŽnculescu, F., Moldoveanu, M., Botea, M. (1996) Analysis of the mechanism of diffusion limited oxygen precipitation in Cz-silicon. Journal of Crystal Growth, 166 (1). 183-188 doi:10.1016/0022-0248(96)00126-1
 
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