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Stǎnculescu, F., Moldoveanu, M., Botea, M. (1996) Analysis of the mechanism of diffusion limited oxygen precipitation in Cz-silicon. Journal of Crystal Growth, 166 (1). 183-188 doi:10.1016/0022-0248(96)00126-1

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Reference TypeJournal (article/letter/editorial)
TitleAnalysis of the mechanism of diffusion limited oxygen precipitation in Cz-silicon
JournalJournal of Crystal Growth
AuthorsStǎnculescu, F.Author
Moldoveanu, M.Author
Botea, M.Author
Year1996 (September)Volume166
Issue1
PublisherElsevier BV
DOIdoi:10.1016/0022-0248(96)00126-1Search in ResearchGate
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Mindat Ref. ID2829554Long-form Identifiermindat:1:5:2829554:5
GUID0
Full ReferenceStǎnculescu, F., Moldoveanu, M., Botea, M. (1996) Analysis of the mechanism of diffusion limited oxygen precipitation in Cz-silicon. Journal of Crystal Growth, 166 (1). 183-188 doi:10.1016/0022-0248(96)00126-1
Plain TextStǎnculescu, F., Moldoveanu, M., Botea, M. (1996) Analysis of the mechanism of diffusion limited oxygen precipitation in Cz-silicon. Journal of Crystal Growth, 166 (1). 183-188 doi:10.1016/0022-0248(96)00126-1
In(1996, September) Journal of Crystal Growth Vol. 166 (1) Elsevier BV

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Dornberger, E., von Ammon, W., Van den Bogaert, N., Dupret, F. (1996) Transient computer simulation of a CZ crystal growth process. Journal of Crystal Growth, 166 (1). 452-457 doi:10.1016/0022-0248(96)00068-1
Woensdregt, Cornelis F. (1996) Chairman's preface. Journal of Crystal Growth, 166 (1). doi:10.1016/0022-0248(96)80043-1
Bulla, D.A.P., Castro, W.E., Stojanoff, V., Ponce, F.A., Hahn, S., Tiller, W.A. (1987) Effects of boron concentration upon oxygen precipitation in CZ silicon. Journal of Crystal Growth, 85 (1). 91-96 doi:10.1016/0022-0248(87)90208-9
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Farkas, B., Blickle, T., Ulbert, Zs., Hasznos-Nezdei, M. (1996) Characterization of mixing of suspension in a mechanically stirred precipitation system. Journal of Crystal Growth, 166 (1). 1064-1067 doi:10.1016/0022-0248(96)00073-5
Alexandru, H.V., Berbecaru, C., Grancea, Al., Iov, V. (1996) KDP prismatic faces: kinetics and the mechanism of their growth from solutions. Journal of Crystal Growth, 166 (1). 162-166 doi:10.1016/0022-0248(96)00037-1
Wolf, Th. (1996) Crystal growth mechanisms and growth anisotropy of YBa2Cu3Ox crystals. Journal of Crystal Growth, 166 (1). 810-815 doi:10.1016/0022-0248(96)00143-1
Wilkes, J.G. (1983) The precipitation of oxygen in silicon. Journal of Crystal Growth, 65 (1). 214-230 doi:10.1016/0022-0248(83)90052-0
Cröll, A., Schweizer, M., Tegetmeier, A., Benz, K.W. (1996) Floating-zone growth of GaAs. Journal of Crystal Growth, 166 (1). 239-244 doi:10.1016/0022-0248(96)00059-0
Van den Bogaert, N., Dupret, F. (1996) Simulation of back-melting in Czochralski growth. Journal of Crystal Growth, 166 (1). 446-451 doi:10.1016/0022-0248(96)00135-2
 
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