Log InRegister
Quick Links : The Mindat ManualThe Rock H. Currier Digital LibraryMindat Newsletter [Free Download]
Home PageAbout MindatThe Mindat ManualHistory of MindatCopyright StatusWho We AreContact UsAdvertise on Mindat
Donate to MindatCorporate SponsorshipSponsor a PageSponsored PagesMindat AdvertisersAdvertise on Mindat
Learning CenterWhat is a mineral?The most common minerals on earthInformation for EducatorsMindat ArticlesThe ElementsThe Rock H. Currier Digital LibraryGeologic Time
Minerals by PropertiesMinerals by ChemistryMineral Visual ExplorerAdvanced Locality SearchRandom MineralRandom LocalitySearch by minIDLocalities Near MeSearch ArticlesSearch GlossaryMore Search Options
Search For:
Mineral Name:
Locality Name:
Keyword(s):
 
The Mindat ManualAdd a New PhotoRate PhotosLocality Edit ReportCoordinate Completion ReportAdd Glossary Item
Mining CompaniesStatisticsUsersMineral MuseumsClubs & OrganizationsMineral Shows & EventsThe Mindat DirectoryDevice SettingsThe Mineral QuizTime Machine
Photo SearchPhoto GalleriesSearch by ColorPhoto Colour ExplorerNew Photos TodayNew Photos YesterdayMembers' Photo GalleriesPast Photo of the Day GalleryPhotography

Lin, Y.S, Hsu, W.C, Lu, S.Y, Su, J.S, Lin, W (1999) An improved heterojunction-emitter bipolar transistor using δ-doped and spacer layers. Materials Chemistry and Physics, 59. 91-95 doi:10.1016/s0254-0584(99)00029-2

Advanced
   -   Only viewable:
Reference TypeJournal (article/letter/editorial)
TitleAn improved heterojunction-emitter bipolar transistor using δ-doped and spacer layers
JournalMaterials Chemistry and Physics
AuthorsLin, Y.SAuthor
Hsu, W.CAuthor
Lu, S.YAuthor
Su, J.SAuthor
Lin, WAuthor
Year1999 (April)Volume59
PublisherElsevier BV
DOIdoi:10.1016/s0254-0584(99)00029-2Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID3051628Long-form Identifiermindat:1:5:3051628:3
GUID0
Full ReferenceLin, Y.S, Hsu, W.C, Lu, S.Y, Su, J.S, Lin, W (1999) An improved heterojunction-emitter bipolar transistor using δ-doped and spacer layers. Materials Chemistry and Physics, 59. 91-95 doi:10.1016/s0254-0584(99)00029-2
Plain TextLin, Y.S, Hsu, W.C, Lu, S.Y, Su, J.S, Lin, W (1999) An improved heterojunction-emitter bipolar transistor using δ-doped and spacer layers. Materials Chemistry and Physics, 59. 91-95 doi:10.1016/s0254-0584(99)00029-2
In(1999, April) Materials Chemistry and Physics Vol. 59 (1) Elsevier BV

See Also

These are possibly similar items as determined by title/reference text matching only.

Li, Y.J, Shieh, H.M, Su, J.S, Kao, M.J, Hsu, W.C (1999) Improved double delta-doped InGaAs/GaAs heterostructures with symmetric graded channel. Materials Chemistry and Physics, 61. 266-269 doi:10.1016/s0254-0584(99)00146-7
Chen, Jing-Yuh, Cheng, Shiou-Ying, Chang, Wen-Lung, Liu, Wen-Chau (1998) δ-doping InGaP/GaAs heterojunction bipolar transistor. Materials Chemistry and Physics, 53. 88-91 doi:10.1016/s0254-0584(97)02066-x
Lin, Yu-Shyan, Wu, Yu-Huei, Su, Jan-Shing, Hsu, Wei-Chou, Ho, Shing-Dong, Lin, Wei (1997) An ImprovedIn0.5Ga0.5P/GaAsDouble Heterostructure-Emitter Bipolar Transistor Using Emitter Edge-Thinning Technique. Japanese Journal of Applied Physics, 36. 2007-2009 doi:10.1143/jjap.36.2007
Tsai, Jung-Hui, Chu, Yu-Jui (2005) Influence of spacer layer on InP/InGaAs δ-doped heterojunction bipolar transistors. Materials Chemistry and Physics, 91. 431-436 doi:10.1016/j.matchemphys.2004.12.003
Lin, Po-Hung, Cheng, Shiou-Ying, Chang, Wen-Lung, Pan, Hsi-Jen, Shie, Yung-Hsin, Liu, Wen-Chau, Tsai, Jung-Hui (1998) Investigation of an AlInAs/GaInAs superlattice-confined emitter bipolar transistor (SCEBT). Materials Chemistry and Physics, 57. 77-80 doi:10.1016/s0254-0584(98)00193-x
(1999) Index. Materials Chemistry and Physics, 59. 267pp. doi:10.1016/s0254-0584(99)00101-7
Wu, Y. H., Su, J. S., Hsu, W. C., Liu, W. C., Lin, W. (1995) A new InP‐based heterojunction bipolar transistor utilizing an In0.53Al0.22Ga0.25As base. Applied Physics Letters, 66 (3). 347-348 doi:10.1063/1.114208
(1999) Index. Materials Chemistry and Physics, 59. 269-273 doi:10.1016/s0254-0584(99)00102-9
Lin, Y. S., Hsu, W. C., Wu, C. H., Lin, W., Hsu, R. T. (1999) High breakdown voltage symmetric double δ-doped In0.49Ga0.51P/In0.25Ga0.75As/GaAs high electron mobility transistor. Applied Physics Letters, 75 (11). 1616-1618 doi:10.1063/1.124772
Wu, Yu-Huei, Su, Jan-Shing, Hsu, Wei-Chou, Lin, Wei, WenChauLiu, , Kao, Ming-Jer, Hsu, Rong-Tay (1995) Emitter Edge-Thinning Effect on InGaAs/InP Double-Heterostructure-Emitter Bipolar Transistor. Japanese Journal of Applied Physics, 34. 5908-5911 doi:10.1143/jjap.34.5908
Huang, J.-H, Lin, C.-H, Chen, Haydn (1999) Ion beam assisted deposition of TiN thin film on Si (100). Materials Chemistry and Physics, 59. 49-56 doi:10.1016/s0254-0584(99)00023-1
 
and/or  
Mindat.org® is an outreach project of the Hudson Institute of Mineralogy, a 501(c)(3) not-for-profit organization. Mindat® and mindat.org® are registered trademarks of the Hudson Institute of Mineralogy.
Copyright © mindat.org and the Hudson Institute of Mineralogy 1993-2026, except where stated. Most political location boundaries are © OpenStreetMap contributors. Mindat.org relies on the contributions of thousands of members and supporters. Founded in 2000 by Jolyon Ralph and Ida Chau.
To cite: Ralph, J., Von Bargen, D., Martynov, P., Zhang, J., Que, X., Prabhu, A., Morrison, S. M., Li, W., Chen, W., & Ma, X. (2025). Mindat.org: The open access mineralogy database to accelerate data-intensive geoscience research. American Mineralogist, 110(6), 833–844. doi:10.2138/am-2024-9486.
Privacy Policy - Terms & Conditions - Contact Us / DMCA issues - Report a bug/vulnerability Current server date and time: June 6, 2026 20:44:46
Go to top of page