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Fazekas, P., Tosatti, E. (1980) Cooperative charge disproportionation of defects in amorphous semiconductors. Journal of Non-Crystalline Solids, 35. 859-863 doi:10.1016/0022-3093(80)90308-7

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Reference TypeJournal (article/letter/editorial)
TitleCooperative charge disproportionation of defects in amorphous semiconductors
JournalJournal of Non-Crystalline Solids
AuthorsFazekas, P.Author
Tosatti, E.Author
Year1980 (January)Volume35
PublisherElsevier BV
DOIdoi:10.1016/0022-3093(80)90308-7Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID613149Long-form Identifiermindat:1:5:613149:8
GUID0
Full ReferenceFazekas, P., Tosatti, E. (1980) Cooperative charge disproportionation of defects in amorphous semiconductors. Journal of Non-Crystalline Solids, 35. 859-863 doi:10.1016/0022-3093(80)90308-7
Plain TextFazekas, P., Tosatti, E. (1980) Cooperative charge disproportionation of defects in amorphous semiconductors. Journal of Non-Crystalline Solids, 35. 859-863 doi:10.1016/0022-3093(80)90308-7
In(1980) Journal of Non-Crystalline Solids Vol. 35. Elsevier BV

See Also

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Adler, David (1980) Defects in amorphous semiconductors. Journal of Non-Crystalline Solids, 35. 819-824 doi:10.1016/0022-3093(80)90301-4
Joannopoulos, J.D. (1980) Theoretical calculations of defect states in amorphous semiconductors. Journal of Non-Crystalline Solids, 35. 781-792 doi:10.1016/0022-3093(80)90298-7
O'Connor, P., Tauc, J. (1980) Photoinduced absorption in hydrogenated amorphous tetrahedrally-bonded semiconductors. Journal of Non-Crystalline Solids, 35. 699-704 doi:10.1016/0022-3093(80)90286-0
Bonch-Bruevich, V.L. (1980) Intrinsic random field in amorphous semiconductors. Journal of Non-Crystalline Solids, 35. 95-98 doi:10.1016/0022-3093(80)90578-5
Golding, Brage (1980) Amorphous semiconductors at very low temperatures. Journal of Non-Crystalline Solids, 35. 1125-1134 doi:10.1016/0022-3093(80)90350-6
Phillips, J.C. (1980) Structural principles of amorphous and glassy semiconductors. Journal of Non-Crystalline Solids, 35. 1157-1165 doi:10.1016/0022-3093(80)90355-5
Ackley, D.E., Tauc, J., Paul, W. (1980) Picosecond relaxations in amorphous semiconductors. Journal of Non-Crystalline Solids, 35. 957-961 doi:10.1016/0022-3093(80)90324-5
Cohen, Morrel H., Singh, J., Yonezawa, F. (1980) Ideal amorphous semiconductors. Journal of Non-Crystalline Solids, 35. 55-60 doi:10.1016/0022-3093(80)90571-2
Nemanich, R.J., Knights, J.C. (1980) Structure and defects in the amorphous Si:As:H system. Journal of Non-Crystalline Solids, 35. 243-248 doi:10.1016/0022-3093(80)90601-8
Kastner, Marc (1980) Defects in lone-pair semiconductors: The valence-alternation model and new directions. Journal of Non-Crystalline Solids, 35. 807-817 doi:10.1016/0022-3093(80)90300-2
Elliot, S.R., Davis, E.A. (1980) Trends in defect-controlled electronic properties of group V amorphous semiconductors. Journal of Non-Crystalline Solids, 35. 849-854 doi:10.1016/0022-3093(80)90306-3
 
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