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Bonch-Bruevich, V.L. (1980) Intrinsic random field in amorphous semiconductors. Journal of Non-Crystalline Solids, 35. 95-98 doi:10.1016/0022-3093(80)90578-5

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Reference TypeJournal (article/letter/editorial)
TitleIntrinsic random field in amorphous semiconductors
JournalJournal of Non-Crystalline Solids
AuthorsBonch-Bruevich, V.L.Author
Year1980 (January)Volume35
PublisherElsevier BV
DOIdoi:10.1016/0022-3093(80)90578-5Search in ResearchGate
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Mindat Ref. ID613686Long-form Identifiermindat:1:5:613686:8
GUID0
Full ReferenceBonch-Bruevich, V.L. (1980) Intrinsic random field in amorphous semiconductors. Journal of Non-Crystalline Solids, 35. 95-98 doi:10.1016/0022-3093(80)90578-5
Plain TextBonch-Bruevich, V.L. (1980) Intrinsic random field in amorphous semiconductors. Journal of Non-Crystalline Solids, 35. 95-98 doi:10.1016/0022-3093(80)90578-5
In(1980) Journal of Non-Crystalline Solids Vol. 35. Elsevier BV

See Also

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Bonch-Bruevich, V.L. (1979) Comments on the calculation of the high-field conductivity of disordered semiconductors in presence of a random field. Journal of Non-Crystalline Solids, 32 (1) 105-111 doi:10.1016/0022-3093(79)90067-x
Zvyagin, I.P. (1987) V.L. Bonch-Bruevich, 1923–1987. Journal of Non-Crystalline Solids, 97. doi:10.1016/0022-3093(87)90005-6
Bonch-Bruevich, V.L. (1970) Behaviour of the charge carriers in slowly varying random field and semiphenomenological approach to the theory of electronic processes in disordered systems. Journal of Non-Crystalline Solids, 4. 410-416 doi:10.1016/0022-3093(70)90069-4
Adler, David (1980) Defects in amorphous semiconductors. Journal of Non-Crystalline Solids, 35. 819-824 doi:10.1016/0022-3093(80)90301-4
Phillips, J.C. (1980) Structural principles of amorphous and glassy semiconductors. Journal of Non-Crystalline Solids, 35. 1157-1165 doi:10.1016/0022-3093(80)90355-5
Ackley, D.E., Tauc, J., Paul, W. (1980) Picosecond relaxations in amorphous semiconductors. Journal of Non-Crystalline Solids, 35. 957-961 doi:10.1016/0022-3093(80)90324-5
Golding, Brage (1980) Amorphous semiconductors at very low temperatures. Journal of Non-Crystalline Solids, 35. 1125-1134 doi:10.1016/0022-3093(80)90350-6
Gee, C.M., Kastner, Marc (1980) Intrinsic-defect photoluminescence in amorphous and crystalline SiO2. Journal of Non-Crystalline Solids, 35. 927-932 doi:10.1016/0022-3093(80)90319-1
Joannopoulos, J.D. (1980) Theoretical calculations of defect states in amorphous semiconductors. Journal of Non-Crystalline Solids, 35. 781-792 doi:10.1016/0022-3093(80)90298-7
Cohen, Morrel H., Singh, J., Yonezawa, F. (1980) Ideal amorphous semiconductors. Journal of Non-Crystalline Solids, 35. 55-60 doi:10.1016/0022-3093(80)90571-2
Fazekas, P., Tosatti, E. (1980) Cooperative charge disproportionation of defects in amorphous semiconductors. Journal of Non-Crystalline Solids, 35. 859-863 doi:10.1016/0022-3093(80)90308-7
 
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