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Hasegawa, Seiichi, Yanagisawa, Kenji (1980) Effects of annealing in plasma gas on photo-conduction in sputtered amorphous Si. Journal of Non-Crystalline Solids, 35. 219-224 doi:10.1016/0022-3093(80)90597-9

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Reference TypeJournal (article/letter/editorial)
TitleEffects of annealing in plasma gas on photo-conduction in sputtered amorphous Si
JournalJournal of Non-Crystalline Solids
AuthorsHasegawa, SeiichiAuthor
Yanagisawa, KenjiAuthor
Year1980 (January)Volume35
PublisherElsevier BV
DOIdoi:10.1016/0022-3093(80)90597-9Search in ResearchGate
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Mindat Ref. ID613795Long-form Identifiermindat:1:5:613795:7
GUID0
Full ReferenceHasegawa, Seiichi, Yanagisawa, Kenji (1980) Effects of annealing in plasma gas on photo-conduction in sputtered amorphous Si. Journal of Non-Crystalline Solids, 35. 219-224 doi:10.1016/0022-3093(80)90597-9
Plain TextHasegawa, Seiichi, Yanagisawa, Kenji (1980) Effects of annealing in plasma gas on photo-conduction in sputtered amorphous Si. Journal of Non-Crystalline Solids, 35. 219-224 doi:10.1016/0022-3093(80)90597-9
In(1980) Journal of Non-Crystalline Solids Vol. 35. Elsevier BV

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Hasegawa, Seiichi, Yazaki, Shigeo, Shimizu, Tatsuo (1978) Effects of annealing and crystallization process in amorphous Siî—¸Ge alloy films. Journal of Non-Crystalline Solids, 27 (2) 215-224 doi:10.1016/0022-3093(78)90125-4
Hargreaves, M., Thompson, M.J., Turner, D. (1980) Conduction in sputtered hydrogenated III–V compounds. Journal of Non-Crystalline Solids, 35. 403-408 doi:10.1016/0022-3093(80)90628-6
Jeffrey, F.R., Shanks, H.R., Danielson, G.C. (1980) The effect of hydrogen content on the properties of reactively sputtered amorphous Siî—¸H. Journal of Non-Crystalline Solids, 35. 261-266 doi:10.1016/0022-3093(80)90604-3
Collins, R.W., Paesler, M.A., Moddel, G., Paul, William (1980) Photoluminescence in sputtered amorphous Si:H alloys. Journal of Non-Crystalline Solids, 35. 681-686 doi:10.1016/0022-3093(80)90283-5
Chan, Y.K, Jayadevaiah, T.S (1974) Effect of annealing on the conduction mechanism in amorphous silicon. Journal of Non-Crystalline Solids, 13 (2) 224-228 doi:10.1016/0022-3093(74)90092-1
Adler, David (1980) Defects in amorphous semiconductors. Journal of Non-Crystalline Solids, 35. 819-824 doi:10.1016/0022-3093(80)90301-4
Ishikawa, R., Kikuchi, M. (1980) Photovoltaic study on the photo-enhanced diffusion of Ag in amorphous films of Ge2S3. Journal of Non-Crystalline Solids, 35. 1061-1066 doi:10.1016/0022-3093(80)90340-3
Belin, E., Bonnelle, C., Flechon, J., Machizaud, F. (1980) Nickel density of states in amorphous metallic Niî—¸P. Journal of Non-Crystalline Solids, 41 (2) 219-224 doi:10.1016/0022-3093(80)90167-2
Sussmann, R.S., Harris, A.J., Ogden, R. (1980) Laser annealing of glow discharge amorphous silicon. Journal of Non-Crystalline Solids, 35. 249-254 doi:10.1016/0022-3093(80)90602-x
Hirose, M., Taniguchi, M., Nakashita, T., Osaka, Y., Suzuki, T., Hasegawa, S., Shimizu, T. (1980) Defect compensation in doped CVD amorphous silicon. Journal of Non-Crystalline Solids, 35. 297-302 doi:10.1016/0022-3093(80)90610-9
Crandall, Richard S. (1980) Electronic transport in bandgap states of hydrogeneted amorphous silicon. Journal of Non-Crystalline Solids, 35. 381-386 doi:10.1016/0022-3093(80)90624-9
 
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