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Galiev, G. B., Vasiliev, A. L., Vasil’evskii, I. S., Imamov, R. M., Klimov, E. A., Klochkov, A. N., Lavruhin, D. V., Maltsev, P. P., Pushkarev, S. S., Trunkin, I. N. (2015) Structural and electrophysical properties of In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As/InP HEMT nanoheterostructures with different combinations of InAs and GaAs inserts in quantum well. Crystallography Reports, 60 (3) 397-405 doi:10.1134/s1063774515030062

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Reference TypeJournal (article/letter/editorial)
TitleStructural and electrophysical properties of In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As/InP HEMT nanoheterostructures with different combinations of InAs and GaAs inserts in quantum well
JournalCrystallography Reports
AuthorsGaliev, G. B.Author
Vasiliev, A. L.Author
Vasil’evskii, I. S.Author
Imamov, R. M.Author
Klimov, E. A.Author
Klochkov, A. N.Author
Lavruhin, D. V.Author
Maltsev, P. P.Author
Pushkarev, S. S.Author
Trunkin, I. N.Author
Year2015 (May)Volume60
Issue3
PublisherPleiades Publishing Ltd
DOIdoi:10.1134/s1063774515030062Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID623281Long-form Identifiermindat:1:5:623281:2
GUID0
Full ReferenceGaliev, G. B., Vasiliev, A. L., Vasil’evskii, I. S., Imamov, R. M., Klimov, E. A., Klochkov, A. N., Lavruhin, D. V., Maltsev, P. P., Pushkarev, S. S., Trunkin, I. N. (2015) Structural and electrophysical properties of In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As/InP HEMT nanoheterostructures with different combinations of InAs and GaAs inserts in quantum well. Crystallography Reports, 60 (3) 397-405 doi:10.1134/s1063774515030062
Plain TextGaliev, G. B., Vasiliev, A. L., Vasil’evskii, I. S., Imamov, R. M., Klimov, E. A., Klochkov, A. N., Lavruhin, D. V., Maltsev, P. P., Pushkarev, S. S., Trunkin, I. N. (2015) Structural and electrophysical properties of In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As/InP HEMT nanoheterostructures with different combinations of InAs and GaAs inserts in quantum well. Crystallography Reports, 60 (3) 397-405 doi:10.1134/s1063774515030062
In(2015, May) Crystallography Reports Vol. 60 (3) Pleiades Publishing Ltd

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Galiev, G. B., Vasiliev, A. L., Imamov, R. M., Klimov, E. A., Maltsev, P. P., Pushkarev, S. S., Presniakov, M. Yu., Trunkin, I. N. (2015) Erratum to: “Structural and electrical properties of InAlAs/InGaAs/InAlAs HEMT heterostructures on InP substrates with InAs inserts in quantum well”. Crystallography Reports, 60 (3) 449 doi:10.1134/s1063774515030128
Galiev, G. B., Vasiliev, A. L., Imamov, R. M., Klimov, E. A., Maltsev, P. P., Pushkarev, S. S., Presniakov, M. Yu., Trunkin, I. N. (2014) Structural and electrical properties of InAlAs/InGaAs/InAlAs HEMT heterostructures on InP substrates with InAs inserts in quantum well. Crystallography Reports, 59 (6) 900-907 doi:10.1134/s1063774514060108
Blagov, A. E., Galiev, G. B., Imamov, R. M., Klimov, E. A., Kondratev, O. A., Pisarevskii, Yu. V., Prosekov, P. A., Pushkarev, S. S., Seregin, A. Yu., Koval’chuk, M. V. (2017) X-ray analysis of multilayer In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As HEMT heterostructures with InAs nanoinsert in quantum well. Crystallography Reports, 62 (3) 355-363 doi:10.1134/s1063774517030026
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Galiev, G. B., Trunkin, I. N., Klimov, E. A., Klochkov, A. N., Vasiliev, A. L., Imamov, R. M., Pushkarev, S. S., Maltsev, P. P. (2017) Epitaxial low-temperature growth of In0.5Ga0.5As films on GaAs(100) and GaAs(111)A substrates using a metamorphic buffer. Crystallography Reports, 62 (6) 947-954 doi:10.1134/s1063774517060104
Galiev, G. B., Vasil’evskii, I. S., Imamov, R. M., Klimov, E. A., Pushkarev, S. S., Subbotin, I. A. (2011) Structural and electrical properties of metamorphic nanoheterostructures with a high InAs content (37–100%) grown on GaAs and InP substrates. Crystallography Reports, 56 (5) 875-879 doi:10.1134/s1063774511050105
Galiev, G. B., Klimov, E. A., Klochkov, A. N., Maltsev, P. P., Pushkarev, S. S., Zhigalina, O. M., Imamov, R. M., Kuskova, A. N., Khmelenin, D. N. (2013) Electrical and structural characteristics of metamorphic In0.38Al0.62As/In0.37Ga0.63As/In0.38Al0.62As HEMT nanoheterostructures. Crystallography Reports, 58 (6) 914-919 doi:10.1134/s1063774513060114
Galiev, G. B., Vasiliev, A. L., Vasil’evskii, I. S., Vinichenko, A. N., Klimov, E. A., Klochkov, A. N., Trunkin, I. N., Pushkarev, S. S. (2020) Structural Characteristics of Epitaxial Low-Temperature Grown {InGaAs/InAlAs} Superlattices on InP(100) and InP(111)A Substrates. Crystallography Reports, 65 (3) 496-501 doi:10.1134/s1063774520030104
Galiev, G. B., Pushkarev, S. S., Orekhov, A. S., Galiev, R. R., Klimov, E. A., Maltsev, P. P., Imamov, R. M. (2014) Electrophysical characteristics and structural parameters of metamorphic HEMT nanoheterostructures In0.7Al0.3As/In0.7Ga0.3As/In0.7Al0.3As containing superlattices with different numbers of periods in the metamorphic buffer. Crystallography Reports, 59 (3) 425-429 doi:10.1134/s1063774514030092
Galiev, G. B., Pushkarev, S. S., Vasil’evskii, I. S., Klimov, E. A., Imamov, R. M., Subbotin, I. A., Pavlenko, E. S., Kvanin, A. L. (2012) Structural and electrophysical analysis of MHEMT In0.70Al0.30As/In0.75Ga0.25As nanoheterostructures with different strain distributions in metamorphic buffer. Crystallography Reports, 57 (6) 841-847 doi:10.1134/s1063774512060028
Galiev, G. B., Klimov, E. A., Vasiliev, A. L., Imamov, R. M., Pushkarev, S. S., Trunkin, I. N., Maltsev, P. P. (2017) Influence of arsenic flow on the crystal structure of epitaxial GaAs grown at low temperatures on GaAs (100) and (111)A substrates. Crystallography Reports, 62 (1) 82-90 doi:10.1134/s1063774517010072
 
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