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Galiev, G. B., Vasil’evskii, I. S., Imamov, R. M., Klimov, E. A., Pushkarev, S. S., Subbotin, I. A. (2011) Structural and electrical properties of metamorphic nanoheterostructures with a high InAs content (37–100%) grown on GaAs and InP substrates. Crystallography Reports, 56 (5) 875-879 doi:10.1134/s1063774511050105

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Reference TypeJournal (article/letter/editorial)
TitleStructural and electrical properties of metamorphic nanoheterostructures with a high InAs content (37–100%) grown on GaAs and InP substrates
JournalCrystallography Reports
AuthorsGaliev, G. B.Author
Vasil’evskii, I. S.Author
Imamov, R. M.Author
Klimov, E. A.Author
Pushkarev, S. S.Author
Subbotin, I. A.Author
Year2011 (September)Volume56
Issue5
PublisherPleiades Publishing Ltd
DOIdoi:10.1134/s1063774511050105Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID620666Long-form Identifiermindat:1:5:620666:0
GUID0
Full ReferenceGaliev, G. B., Vasil’evskii, I. S., Imamov, R. M., Klimov, E. A., Pushkarev, S. S., Subbotin, I. A. (2011) Structural and electrical properties of metamorphic nanoheterostructures with a high InAs content (37–100%) grown on GaAs and InP substrates. Crystallography Reports, 56 (5) 875-879 doi:10.1134/s1063774511050105
Plain TextGaliev, G. B., Vasil’evskii, I. S., Imamov, R. M., Klimov, E. A., Pushkarev, S. S., Subbotin, I. A. (2011) Structural and electrical properties of metamorphic nanoheterostructures with a high InAs content (37–100%) grown on GaAs and InP substrates. Crystallography Reports, 56 (5) 875-879 doi:10.1134/s1063774511050105
In(2011, September) Crystallography Reports Vol. 56 (5) Pleiades Publishing Ltd

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Galiev, G. B., Pushkarev, S. S., Vasil’evskii, I. S., Klimov, E. A., Imamov, R. M., Subbotin, I. A., Pavlenko, E. S., Kvanin, A. L. (2012) Structural and electrophysical analysis of MHEMT In0.70Al0.30As/In0.75Ga0.25As nanoheterostructures with different strain distributions in metamorphic buffer. Crystallography Reports, 57 (6) 841-847 doi:10.1134/s1063774512060028
Vasil’ev, A. L., Vasil’evskii, I. S., Galiev, G. B., Imamov, R. M., Klimov, E. A., Kovalchuk, M. V., Ponomarev, D. S., Roddatis, V. V., Subbotin, I. A. (2011) Structural and electrical properties of quantum wells with nanoscale InAs inserts in In y Al1 − y As/In x Ga1 − x As heterostructures on InP substrates. Crystallography Reports, 56 (2) 298-309 doi:10.1134/s1063774511020180
Galiev, G. B., Pushkarev, S. S., Klimov, E. A., Maltsev, P. P., Imamov, R. M., Subbotin, I. A. (2014) X-Ray diffractometry of metamorphic nanoheterostructures. Crystallography Reports, 59 (2) 258-265 doi:10.1134/s1063774514020096
Galiev, G. B., Vasiliev, A. L., Vasil’evskii, I. S., Imamov, R. M., Klimov, E. A., Klochkov, A. N., Lavruhin, D. V., Maltsev, P. P., Pushkarev, S. S., Trunkin, I. N. (2015) Structural and electrophysical properties of In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As/InP HEMT nanoheterostructures with different combinations of InAs and GaAs inserts in quantum well. Crystallography Reports, 60 (3) 397-405 doi:10.1134/s1063774515030062
Galiev, G. B., Vasiliev, A. L., Imamov, R. M., Klimov, E. A., Maltsev, P. P., Pushkarev, S. S., Presniakov, M. Yu., Trunkin, I. N. (2014) Structural and electrical properties of InAlAs/InGaAs/InAlAs HEMT heterostructures on InP substrates with InAs inserts in quantum well. Crystallography Reports, 59 (6) 900-907 doi:10.1134/s1063774514060108
Vasil’evskiĭ, I. S., Galiev, G. B., Mokerov, V. G., Klimov, E. A., Imamov, R. M., Subbotin, I. A. (2010) The electrical and structural properties of In y Ga1 − y As/In x Al1 − x As/InP quantum wells with different InAs content. Crystallography Reports, 55 (1) 6-9 doi:10.1134/s1063774510010025
Galiev, G. B., Vasiliev, A. L., Vasil’evskii, I. S., Vinichenko, A. N., Klimov, E. A., Klochkov, A. N., Trunkin, I. N., Pushkarev, S. S. (2020) Structural Characteristics of Epitaxial Low-Temperature Grown {InGaAs/InAlAs} Superlattices on InP(100) and InP(111)A Substrates. Crystallography Reports, 65 (3) 496-501 doi:10.1134/s1063774520030104
Galiev, G. B., Vasiliev, A. L., Imamov, R. M., Klimov, E. A., Maltsev, P. P., Pushkarev, S. S., Presniakov, M. Yu., Trunkin, I. N. (2015) Erratum to: “Structural and electrical properties of InAlAs/InGaAs/InAlAs HEMT heterostructures on InP substrates with InAs inserts in quantum well”. Crystallography Reports, 60 (3) 449 doi:10.1134/s1063774515030128
Galiev, G. B., Trunkin, I. N., Klimov, E. A., Klochkov, A. N., Vasiliev, A. L., Imamov, R. M., Pushkarev, S. S., Maltsev, P. P. (2017) Epitaxial low-temperature growth of In0.5Ga0.5As films on GaAs(100) and GaAs(111)A substrates using a metamorphic buffer. Crystallography Reports, 62 (6) 947-954 doi:10.1134/s1063774517060104
Galiev, G. B., Klimov, E. A., Vasiliev, A. L., Imamov, R. M., Pushkarev, S. S., Trunkin, I. N., Maltsev, P. P. (2017) Influence of arsenic flow on the crystal structure of epitaxial GaAs grown at low temperatures on GaAs (100) and (111)A substrates. Crystallography Reports, 62 (1) 82-90 doi:10.1134/s1063774517010072
Galiev, G. B., Pushkarev, S. S., Orekhov, A. S., Galiev, R. R., Klimov, E. A., Maltsev, P. P., Imamov, R. M. (2014) Electrophysical characteristics and structural parameters of metamorphic HEMT nanoheterostructures In0.7Al0.3As/In0.7Ga0.3As/In0.7Al0.3As containing superlattices with different numbers of periods in the metamorphic buffer. Crystallography Reports, 59 (3) 425-429 doi:10.1134/s1063774514030092
 
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