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Vasil’ev, A. L., Vasil’evskii, I. S., Galiev, G. B., Imamov, R. M., Klimov, E. A., Kovalchuk, M. V., Ponomarev, D. S., Roddatis, V. V., Subbotin, I. A. (2011) Structural and electrical properties of quantum wells with nanoscale InAs inserts in In y Al1 − y As/In x Ga1 − x As heterostructures on InP substrates. Crystallography Reports, 56 (2) 298-309 doi:10.1134/s1063774511020180

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Reference TypeJournal (article/letter/editorial)
TitleStructural and electrical properties of quantum wells with nanoscale InAs inserts in In y Al1 − y As/In x Ga1 − x As heterostructures on InP substrates
JournalCrystallography Reports
AuthorsVasil’ev, A. L.Author
Vasil’evskii, I. S.Author
Galiev, G. B.Author
Imamov, R. M.Author
Klimov, E. A.Author
Kovalchuk, M. V.Author
Ponomarev, D. S.Author
Roddatis, V. V.Author
Subbotin, I. A.Author
Year2011 (March)Volume56
Issue2
PublisherPleiades Publishing Ltd
DOIdoi:10.1134/s1063774511020180Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID620404Long-form Identifiermindat:1:5:620404:8
GUID0
Full ReferenceVasil’ev, A. L., Vasil’evskii, I. S., Galiev, G. B., Imamov, R. M., Klimov, E. A., Kovalchuk, M. V., Ponomarev, D. S., Roddatis, V. V., Subbotin, I. A. (2011) Structural and electrical properties of quantum wells with nanoscale InAs inserts in In y Al1 − y As/In x Ga1 − x As heterostructures on InP substrates. Crystallography Reports, 56 (2) 298-309 doi:10.1134/s1063774511020180
Plain TextVasil’ev, A. L., Vasil’evskii, I. S., Galiev, G. B., Imamov, R. M., Klimov, E. A., Kovalchuk, M. V., Ponomarev, D. S., Roddatis, V. V., Subbotin, I. A. (2011) Structural and electrical properties of quantum wells with nanoscale InAs inserts in In y Al1 − y As/In x Ga1 − x As heterostructures on InP substrates. Crystallography Reports, 56 (2) 298-309 doi:10.1134/s1063774511020180
In(2011, March) Crystallography Reports Vol. 56 (2) Pleiades Publishing Ltd

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Vasil’evskiĭ, I. S., Galiev, G. B., Mokerov, V. G., Klimov, E. A., Imamov, R. M., Subbotin, I. A. (2010) The electrical and structural properties of In y Ga1 − y As/In x Al1 − x As/InP quantum wells with different InAs content. Crystallography Reports, 55 (1) 6-9 doi:10.1134/s1063774510010025
Galiev, G. B., Vasil’evskii, I. S., Imamov, R. M., Klimov, E. A., Pushkarev, S. S., Subbotin, I. A. (2011) Structural and electrical properties of metamorphic nanoheterostructures with a high InAs content (37–100%) grown on GaAs and InP substrates. Crystallography Reports, 56 (5) 875-879 doi:10.1134/s1063774511050105
Galiev, G. B., Vasiliev, A. L., Imamov, R. M., Klimov, E. A., Maltsev, P. P., Pushkarev, S. S., Presniakov, M. Yu., Trunkin, I. N. (2014) Structural and electrical properties of InAlAs/InGaAs/InAlAs HEMT heterostructures on InP substrates with InAs inserts in quantum well. Crystallography Reports, 59 (6) 900-907 doi:10.1134/s1063774514060108
Galiev, G. B., Vasiliev, A. L., Imamov, R. M., Klimov, E. A., Maltsev, P. P., Pushkarev, S. S., Presniakov, M. Yu., Trunkin, I. N. (2015) Erratum to: “Structural and electrical properties of InAlAs/InGaAs/InAlAs HEMT heterostructures on InP substrates with InAs inserts in quantum well”. Crystallography Reports, 60 (3) 449 doi:10.1134/s1063774515030128
Galiev, G. B., Vasiliev, A. L., Vasil’evskii, I. S., Imamov, R. M., Klimov, E. A., Klochkov, A. N., Lavruhin, D. V., Maltsev, P. P., Pushkarev, S. S., Trunkin, I. N. (2015) Structural and electrophysical properties of In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As/InP HEMT nanoheterostructures with different combinations of InAs and GaAs inserts in quantum well. Crystallography Reports, 60 (3) 397-405 doi:10.1134/s1063774515030062
Imamov, R. M., Subbotin, I. A., Galiev, G. B. (2008) Study of the relationship between the crystal structure of nanolayers and electrical properties in Al x Ga1−x As/In y Ga1−y As pseudobinary heterostructures by double-crystal X-ray diffraction. Crystallography Reports, 53 (2) 183-186 doi:10.1134/s106377450802003x
Imamov, R. M., Mokerov, V. G., Pashaev, É. M., Subbotin, I. A., Fedorov, Yu. V. (2005) Study of structural properties of InxGa1−x As/InyAl1−y As heterosystems on InP substrates. Crystallography Reports, 50 (2) 320-326 doi:10.1134/1.1887908
Galiev, G. B., Pushkarev, S. S., Vasil’evskii, I. S., Klimov, E. A., Imamov, R. M., Subbotin, I. A., Pavlenko, E. S., Kvanin, A. L. (2012) Structural and electrophysical analysis of MHEMT In0.70Al0.30As/In0.75Ga0.25As nanoheterostructures with different strain distributions in metamorphic buffer. Crystallography Reports, 57 (6) 841-847 doi:10.1134/s1063774512060028
Galiev, G. B., Pushkarev, S. S., Klimov, E. A., Maltsev, P. P., Imamov, R. M., Subbotin, I. A. (2014) X-Ray diffractometry of metamorphic nanoheterostructures. Crystallography Reports, 59 (2) 258-265 doi:10.1134/s1063774514020096
Blagov, A. E., Galiev, G. B., Imamov, R. M., Klimov, E. A., Kondratev, O. A., Pisarevskii, Yu. V., Prosekov, P. A., Pushkarev, S. S., Seregin, A. Yu., Koval’chuk, M. V. (2017) X-ray analysis of multilayer In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As HEMT heterostructures with InAs nanoinsert in quantum well. Crystallography Reports, 62 (3) 355-363 doi:10.1134/s1063774517030026
Kulbachinskii, V. A., Lunin, R. A., Yuzeeva, N. A., Vasil’evskii, I. S., Galiev, G. B., Klimov, E. A. (2013) Electron mobilities in isomorphic In0.53Ga0.47As quantum wells on InP substrates. Journal of Experimental and Theoretical Physics, 116 (5). 755-759 doi:10.1134/s1063776113050063
 
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