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Andreev, B. A. (2005) Erbium Photoluminescence Excitation Spectroscopy in Si : Er Epitaxial Structures. Physics of the Solid State, 47. 86pp. doi:10.1134/1.1853451

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Reference TypeJournal (article/letter/editorial)
TitleErbium Photoluminescence Excitation Spectroscopy in Si : Er Epitaxial Structures
JournalPhysics of the Solid State
AuthorsAndreev, B. A.Author
Year2005Volume47
PublisherPleiades Publishing Ltd
DOIdoi:10.1134/1.1853451Search in ResearchGate
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Mindat Ref. ID6152002Long-form Identifiermindat:1:5:6152002:2
GUID0
Full ReferenceAndreev, B. A. (2005) Erbium Photoluminescence Excitation Spectroscopy in Si : Er Epitaxial Structures. Physics of the Solid State, 47. 86pp. doi:10.1134/1.1853451
Plain TextAndreev, B. A. (2005) Erbium Photoluminescence Excitation Spectroscopy in Si : Er Epitaxial Structures. Physics of the Solid State, 47. 86pp. doi:10.1134/1.1853451
In(n.d.) Physics of the Solid State Vol. 47. Pleiades Publishing Ltd

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Sobolev, N. A. (2005) MBE-Grown Si : Er Light-Emitting Structures: Effect of Epitaxial Growth Conditions on Impurity Concentration and Photoluminescence. Physics of the Solid State, 47. 113pp. doi:10.1134/1.1853458
Andreev, B. A., Krasil’nik, Z. F., Kryzhkov, D. I., Yablonskii, A. N., Kuznetsov, V. P., Gregorkiewicz, T., Klik, M. A. J. (2004) Er3+ photoluminescence excitation spectra in erbium-doped epitaxial silicon structures. Physics of the Solid State, 46. 97-100 doi:10.1134/1.1641931
Gusev, O. B. (2005) Erbium Excitation in a SiO[sub 2] : Si-nc Matrix under Pulsed Pumping. Physics of the Solid State, 47. 110pp. doi:10.1134/1.1853457
Vdovin, V. I. (2005) Light-Emitting Si : Er Structures Prepared by Molecular-Beam Epitaxy: Structural Defects. Physics of the Solid State, 47. 1823pp. doi:10.1134/1.2087730
Remizov, D. Yu. (2005) Effective Excitation Cross Section and Lifetime of Er[sup 3+] Ions in Si : Er Light-Emitting Diodes Fabricated by Sublimation Molecular-Beam Epitaxy. Physics of the Solid State, 47. 98pp. doi:10.1134/1.1853454
Sobolev, N. A. (2005) MBE-Grown Si : Er Light-Emitting Structures: Effect of Implantation and Annealing on the Luminescence Properties. Physics of the Solid State, 47. 117pp. doi:10.1134/1.1853459
Shmagin, V. B. (2005) Er[sup 3+] Ion Electroluminescence of p[sup +]-Si∕n-Si : Er∕n[sup +]-Si Diode Structure under Breakdown Conditions. Physics of the Solid State, 47. 125pp. doi:10.1134/1.1853461
Timoshenko, V. Yu. (2005) Erbium Ion Luminescence of Silicon Nanocrystal Layers in a Silicon Dioxide Matrix Measured under Strong Optical Excitation. Physics of the Solid State, 47. 121pp. doi:10.1134/1.1853460
Andreev, B. A., Krasil’nik, Z. F., Kuznetsov, V. P., Soldatkin, A. O., Bresler, M. S., Gusev, O. B., Yassievich, I. N. (2001) Peculiarities of photoluminescence of erbium in silicon structures prepared by the sublimation molecular-beam epitaxy method. Physics of the Solid State, 43. 1012-1017 doi:10.1134/1.1378137
Akimov, B. A. (2005) Recombination at Mixed-Valence Impurity Centers in PbTe(Ga) Epitaxial Layers. Physics of the Solid State, 47. 166pp. doi:10.1134/1.1853470
Kuznetsov, V. P. (2005) Crystal Lattice Defects and Hall Mobility of Electrons in Si : Er∕ Si Layers Grown by Sublimation Molecular-Beam Epitaxy. Physics of the Solid State, 47. 102pp. doi:10.1134/1.1853455
 
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