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Sobolev, N. A. (2005) MBE-Grown Si : Er Light-Emitting Structures: Effect of Implantation and Annealing on the Luminescence Properties. Physics of the Solid State, 47. 117pp. doi:10.1134/1.1853459

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Reference TypeJournal (article/letter/editorial)
TitleMBE-Grown Si : Er Light-Emitting Structures: Effect of Implantation and Annealing on the Luminescence Properties
JournalPhysics of the Solid State
AuthorsSobolev, N. A.Author
Year2005Volume47
PublisherPleiades Publishing Ltd
DOIdoi:10.1134/1.1853459Search in ResearchGate
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Mindat Ref. ID6152010Long-form Identifiermindat:1:5:6152010:1
GUID0
Full ReferenceSobolev, N. A. (2005) MBE-Grown Si : Er Light-Emitting Structures: Effect of Implantation and Annealing on the Luminescence Properties. Physics of the Solid State, 47. 117pp. doi:10.1134/1.1853459
Plain TextSobolev, N. A. (2005) MBE-Grown Si : Er Light-Emitting Structures: Effect of Implantation and Annealing on the Luminescence Properties. Physics of the Solid State, 47. 117pp. doi:10.1134/1.1853459
In(n.d.) Physics of the Solid State Vol. 47. Pleiades Publishing Ltd

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Sobolev, N. A. (2005) MBE-Grown Si : Er Light-Emitting Structures: Effect of Epitaxial Growth Conditions on Impurity Concentration and Photoluminescence. Physics of the Solid State, 47. 113pp. doi:10.1134/1.1853458
Sobolev, N. A., Emel’yanov, A. M., Shek, E. I., Vdovin, V. I. (2004) Effect of the postimplantation-annealing temperature on the properties of silicon light-emitting diodes fabricated through boron ion implantation into n-Si. Physics of the Solid State, 46. 35-39 doi:10.1134/1.1641916
Vdovin, V. I. (2005) Light-Emitting Si : Er Structures Prepared by Molecular-Beam Epitaxy: Structural Defects. Physics of the Solid State, 47. 1823pp. doi:10.1134/1.2087730
Remizov, D. Yu. (2005) Effective Excitation Cross Section and Lifetime of Er[sup 3+] Ions in Si : Er Light-Emitting Diodes Fabricated by Sublimation Molecular-Beam Epitaxy. Physics of the Solid State, 47. 98pp. doi:10.1134/1.1853454
Emel’yanov, A. M., Shek, E. I. (2004) Effect of current on the electroluminescence of defects produced by high-temperature post-implantation annealing of Si: (Er,O) structures in a chlorine-containing environment. Physics of the Solid State, 46. 1810-1814 doi:10.1134/1.1809410
Andreev, B. A. (2005) Erbium Photoluminescence Excitation Spectroscopy in Si : Er Epitaxial Structures. Physics of the Solid State, 47. 86pp. doi:10.1134/1.1853451
Sobolev, N. A., Kalyadin, A. E., Aruev, P. N., Zabrodskii, V. V., Shek, E. I., Shtel’makh, K. F., Karabeshkin, K. V. (2016) Effect of the implantation dose and annealing time on the luminescence properties of (113) defects in silicon implanted by oxygen ions. Physics of the Solid State, 58. 2499-2502 doi:10.1134/s1063783416120283
Soshnikov, I. P. (2005) Atomic Structure of MBE-Grown GaAs Nanowhiskers. Physics of the Solid State, 47. 2213pp. doi:10.1134/1.2142881
Shalygina, E. E. (2005) Effect of Annealing on the Magnetic and Magnetooptical Properties of Ni Films. Physics of the Solid State, 47. 684pp. doi:10.1134/1.1913981
Shmagin, V. B. (2005) Er[sup 3+] Ion Electroluminescence of p[sup +]-Si∕n-Si : Er∕n[sup +]-Si Diode Structure under Breakdown Conditions. Physics of the Solid State, 47. 125pp. doi:10.1134/1.1853461
Krasil’nikova, L. V. (2005) Analysis of the Gain and Luminescence Properties of Si∕Si[sub 1 – ][sub x]Ge[sub x] : Er∕Si Heterostructures Produced by Sublimation Molecular-Beam Epitaxy in a Gas Phase. Physics of the Solid State, 47. 93pp. doi:10.1134/1.1853453
 
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