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Shmagin, V. B. (2005) Er[sup 3+] Ion Electroluminescence of p[sup +]-Si∕n-Si : Er∕n[sup +]-Si Diode Structure under Breakdown Conditions. Physics of the Solid State, 47. 125pp. doi:10.1134/1.1853461

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Reference TypeJournal (article/letter/editorial)
TitleEr[sup 3+] Ion Electroluminescence of p[sup +]-Si∕n-Si : Er∕n[sup +]-Si Diode Structure under Breakdown Conditions
JournalPhysics of the Solid State
AuthorsShmagin, V. B.Author
Year2005Volume47
PublisherPleiades Publishing Ltd
DOIdoi:10.1134/1.1853461Search in ResearchGate
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Mindat Ref. ID6152012Long-form Identifiermindat:1:5:6152012:9
GUID0
Full ReferenceShmagin, V. B. (2005) Er[sup 3+] Ion Electroluminescence of p[sup +]-Si∕n-Si : Er∕n[sup +]-Si Diode Structure under Breakdown Conditions. Physics of the Solid State, 47. 125pp. doi:10.1134/1.1853461
Plain TextShmagin, V. B. (2005) Er[sup 3+] Ion Electroluminescence of p[sup +]-Si∕n-Si : Er∕n[sup +]-Si Diode Structure under Breakdown Conditions. Physics of the Solid State, 47. 125pp. doi:10.1134/1.1853461
In(n.d.) Physics of the Solid State Vol. 47. Pleiades Publishing Ltd

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Remizov, D. Yu. (2005) Effective Excitation Cross Section and Lifetime of Er[sup 3+] Ions in Si : Er Light-Emitting Diodes Fabricated by Sublimation Molecular-Beam Epitaxy. Physics of the Solid State, 47. 98pp. doi:10.1134/1.1853454
Shmagin, V. B., Remizov, D. Yu., Krasil’nik, Z. F., Kuznetsov, V. P., Shabanov, V. N., Krasil’nikova, L. V., Kryzhkov, D. I., Drozdov, M. N. (2004) Effect of the p-n junction breakdown mechanism on the Er3+ ion electroluminescence intensity and excitation efficiency in Si: Er epitaxial layers grown through sublimation molecular beam epitaxy. Physics of the Solid State, 46. 109-112 doi:10.1134/1.1641934
Ivanovskikh, K. V. (2005) Low-Temperature Time-Resolved VUV Luminescence Spectroscopy of SrF[sub 2] : Er[sup 3+] Crystals. Physics of the Solid State, 47. 1446pp. doi:10.1134/1.2014486
Sobolev, N. A. (2005) MBE-Grown Si : Er Light-Emitting Structures: Effect of Epitaxial Growth Conditions on Impurity Concentration and Photoluminescence. Physics of the Solid State, 47. 113pp. doi:10.1134/1.1853458
Dzholdoshov, B. K. (2005) Ionoluminescence of Eu[sup 2+]–Eu[sup 3+] Clusters in NaF : Eu Single Crystals. Physics of the Solid State, 47. 1470pp. doi:10.1134/1.2014493
Kuznetsov, V. P. (2005) Crystal Lattice Defects and Hall Mobility of Electrons in Si : Er∕ Si Layers Grown by Sublimation Molecular-Beam Epitaxy. Physics of the Solid State, 47. 102pp. doi:10.1134/1.1853455
Andreev, B. A. (2005) Erbium Photoluminescence Excitation Spectroscopy in Si : Er Epitaxial Structures. Physics of the Solid State, 47. 86pp. doi:10.1134/1.1853451
Bannikov, V. V. (2005) Double Exchange in Cubic Crystals with Pairs of Exchange-Coupled Mixed-Valence 3d[sup 3] –3d[sup 4] Ions. Physics of the Solid State, 47. 1532pp. doi:10.1134/1.2014508
Popova, M. N. (2005) Stark Structure and Exchange Splittings of Nd[sup 3+] Ion Levels in Chain Nickelate Nd[sub 2]BaNiO[sub 5]. Physics of the Solid State, 47. 1497pp. doi:10.1134/1.2014500
Aziz, Anver, Narasimhan, K. L. (2000) Transport in n[sup +](p[sup +]) Si–AlQ–Al junctions. Journal of Applied Physics, 88 (8). 4739pp. doi:10.1063/1.1311306
Sobolev, N. A. (2005) MBE-Grown Si : Er Light-Emitting Structures: Effect of Implantation and Annealing on the Luminescence Properties. Physics of the Solid State, 47. 117pp. doi:10.1134/1.1853459
 
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